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CORC

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Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors 期刊论文
CHINESE PHYSICS B, 2022, 卷号: 31, 期号: 3, 页码: 6
作者:  Lin, Zheng-Zhao;  Lu, Ling;  Zheng, Xue-Feng;  Cao, Yan-Rong;  Hu, Pei-Pei
收藏  |  浏览/下载：23/0  |  提交时间：2022/04/11
Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 9, 页码: 7
作者:  Wang, Ying-Zhe;  Zheng, Xue-Feng;  Lv, Ling;  Cao, Yan-Rong;  Wang, Xiao-Hu
收藏  |  浏览/下载：19/0  |  提交时间：2021/12/08
Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
收藏  |  浏览/下载：3/0  |  提交时间：2021/07/06
Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 卷号: 7, 期号: 19, 页码: 5677
作者:  Li, Guanjie;  Li, Xiaomin;  Zhao, Junliang;  Zhu, Qiuxiang;  Chen, Yongbo
收藏  |  浏览/下载：42/0  |  提交时间：2019/12/26
Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit 期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: 34, 页码: 3711-3728
作者:  Xie, Ruiliang;  Yang, Xu;  Xu, Guangzhao;  Wei, Jin;  Wang, Yuru
收藏  |  浏览/下载：28/0  |  提交时间：2019/11/19
Defect evolution of oxygen induced Vth-shift for ON-state biased AlGaN/GaN HEMTs (Open Access) 期刊论文
Applied Physics Letters, 2019, 卷号: 115, 期号: 14
作者:  Wang, Rong;  Xu, Jianxing;  Zhang, Shiyong;  Cheng, Zhe;  Zhang, Lian
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/05
Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors 期刊论文
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2019, 卷号: 129, 页码: 54-60
作者:  Zhu, Gengchang;  Liang, Guangda;  Zhou, Yang;  Chen, Xiufang;  Xu, Xiangang
收藏  |  浏览/下载：23/0  |  提交时间：2019/12/11
Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer 期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: Vol.114 No.1
作者:  Zhang, Sheng;  Wei, Ke;  Ma, Xiao-Hua;  Hou, Bin;  Liu, Guo-Guo
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17
Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:  Hongliang Zhao;  Lin-An Yang;  Hao Zou;  Xiao-hua Ma;  Yue Hao
收藏  |  浏览/下载：35/0  |  提交时间：2019/12/17
Effects of Annealing on Enhancement-Mode AlGaN/GaN/AlGaN Double Heterostructures HEMTs with Different GaN Channel Layer Thickness 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2019, 卷号: Vol.14 No.2, 页码: 184-188
作者:  Wang, Xin;  He, Yun-Long;  He, Qing;  Wang, Chong;  Lei, Wei-Ning
收藏  |  浏览/下载：23/0  |  提交时间：2019/12/17

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