QQ客服 官方微博 反馈留言

	Defect evolution of oxygen induced Vth-shift for ON-state biased AlGaN/GaN HEMTs (Open Access)
	Wang, Rong; Xu, Jianxing; Zhang, Shiyong; Cheng, Zhe; Zhang, Lian; Zheng, Penghui; Chen, Feng-Xiang; Tong, Xiaodong; Zhang, Yun; Tan, Wei
刊名	Applied Physics Letters
	2019
卷号	115期号:14
ISSN号	0003-6951
DOI	10.1063/1.5112115
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4241766
专题	武汉大学
推荐引用方式 GB/T 7714	Wang, Rong,Xu, Jianxing,Zhang, Shiyong,et al. Defect evolution of oxygen induced Vth-shift for ON-state biased AlGaN/GaN HEMTs (Open Access)[J]. Applied Physics Letters,2019,115(14).
APA	Wang, Rong.,Xu, Jianxing.,Zhang, Shiyong.,Cheng, Zhe.,Zhang, Lian.,...&Tan, Wei.(2019).Defect evolution of oxygen induced Vth-shift for ON-state biased AlGaN/GaN HEMTs (Open Access).Applied Physics Letters,115(14).
MLA	Wang, Rong,et al."Defect evolution of oxygen induced Vth-shift for ON-state biased AlGaN/GaN HEMTs (Open Access)".Applied Physics Letters 115.14(2019).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。