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All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing
期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2020
作者:
Hu, Lingxiang
;
Yang, Jing
;
Wang, Jingrui
;
Cheng, Peihong
;
Chua, Leon O.
收藏
  |  
浏览/下载:118/0
  |  
提交时间:2020/12/16
AMORPHOUS OXIDE SEMICONDUCTOR
RESISTIVE SWITCHING MEMORY
ELECTRONIC-STRUCTURE
SYNAPSES
DEVICE
A-INGAZNO4-X
NETWORKS
Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 6
作者:
He, Jiawei
;
Li, Guoli
;
Lv, Yawei
;
Wang, Chunlan
;
Liu, Chuansheng
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/12/05
amorphous oxide semiconductor
bilayer stack
defect self-compensation
high mobility
thin-film transistor
Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: Vol.5 No.6
作者:
He, JW
;
Li, GL
;
Lv, YW
;
Wang, CL
;
Liu, CS
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/17
amorphous oxide semiconductor
bilayer stack
defect self-compensation
high mobility
thin-film transistor
Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications
期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7566-7572
作者:
Liang, Lingyan
;
Wu, Weihua
;
Cao, Hongtao
;
Lan, Linfeng
;
Yao, Meiyi
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2018/12/04
Amorphous Oxide Semiconductors
Field-effect Transistors
Low-temperature
Gate Dielectrics
Low-voltage
Photochemical Activation
Electrical Performance
Combustion Synthesis
High-mobility
Electronics
Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications
期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7566-7572
作者:
Wu, Weihua
;
Liang, Yu
;
Cao, Hongtao
;
Lan, Linfeng
;
Yao, Meiyi
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2018/12/04
Amorphous Oxide Semiconductors
Field-effect Transistors
Low-temperature
Gate Dielectrics
Low-voltage
Photochemical Activation
Electrical Performance
Combustion Synthesis
High-mobility
Electronics
Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter
期刊论文
Journal of Alloys and Compounds, 2018
作者:
Q.B. Lin
;
C. Zhang
;
G. He
;
B. Yang
;
L. Zhu
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
Sputtering
Oxygen
partial
pressure
ratio
α-IGZO
Thin
film
transistors
Inverter
Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 4, 页码: 1377-1382
作者:
Wang, Yiming
;
Yang, Jin
;
Wang, Hanbin
;
Zhang, Jiawei
;
Li, He
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/11
Amorphous indium-gallium-zinc oxide ( a-InGaZnO)
current gain
high
frequency
thin-film transistor (TFT)
The impact of Deposition Rate and Hydrophobicity of Passivation Layer on The Stability of Back-Channel-Etch Amorphous InGaZnO Thin-Film Transistors
期刊论文
SID Symposium Digest of Technical Papers, 2018, 卷号: Vol.49 No.1, 页码: 1239-1241
作者:
GongTan Li
;
Wei Wu
;
ShiMin Ge
;
Shan Li
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/26
Influence of different conditions on the electrical performance of amorphous InGaZnO thin-film transistors with HfO2/SiNx stacked dielectrics
期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 卷号: 35
作者:
Wang, RuoZheng
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  |  
浏览/下载:5/0
  |  
提交时间:2019/11/26
The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics
期刊论文
SOLID-STATE ELECTRONICS, 2017, 卷号: 133, 页码: 6-9
作者:
Wang, Ruo Zheng
;
Wu, Sheng Li
;
Li, Xin Yu
;
Zhang, Jin Tao
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/11/26
HfO2
Stacked dielectrics
Threshold voltage shift
Transfer characteristics
Negative and positive gate bias stress
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