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CORC

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Improved carrier confinement and stimulated recombination rate in GaN-based vertical-cavity surface-emitting lasers with buried p-AlGaN inversion layer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2020, 卷号: 146
作者:  Cui, Mei;  Gao, Yuanbin;  Hang, Sheng;  Qiu, Xuejiao;  Zhang, Yonghui
收藏  |  浏览/下载：49/0  |  提交时间：2020/12/16
Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2019, 卷号: 129, 页码: 20-27
作者:  Xu, Houqiang;  Jiang, Jie'an;  Sheikhi, Moheb;  Chen, Zhaoying;  Hoo, Jason
收藏  |  浏览/下载：27/0  |  提交时间：2019/12/18
Simulation study on AlGaN/GaN diode with Gamma-shaped anode for ultra-low turn-on voltage 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018
作者:  Wang, Zeheng;  Ren, Kailin;  Guo, Songnan;  Luo, Yi;  Jin, Xiaosheng(金晓盛)
收藏  |  浏览/下载：31/0  |  提交时间：2019/03/27
Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 122, 页码: 74-79
作者:  Gaoqiang Deng ;   Yuantao Zhang ;   Ye Yu ;   Zhen Huang ;   Xu Han ;   Liang Chen ;   Long Yan ;   Pengchong Li ;   Xin Dong ;   Degang Zhao ;   Guotong Du
收藏  |  浏览/下载：15/0  |  提交时间：2019/11/19
A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 160-168
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 120, 页码: 389-394
作者:  Liu, Yan;  Lin, Zhaojun;  Cui, Peng;  Fu, Chen;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 103, 页码: 113-120
作者:  Liu, Huan;  Cheng, Aijie;  Lin, Zhaojun;  Cui, Peng;  Liu, Yan
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 111, 页码: 806-815
作者:  Fu, Chen;  Lin, Zhaojun;  Liu, Yan;  Cui, Peng;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 110, 页码: 289-295
作者:  Cui, Peng;  Lin, Zhaojun;  Fu, Chen;  Liu, Yan;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Influence of gate width on gate-channel carrier mobility in AlGaN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 111, 页码: 65-72
作者:  Yang, Ming;  Ji, Qizheng;  Gao, Zhiliang;  Zhang, Shufeng;  Lin, Zhaojun
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/12

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