Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates

doi:10.1016/j.spmi.2019.03.010

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2019专题

	Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates
	Xu, Houqiang ; Jiang, Jie'an ; Sheikhi, Moheb ; Chen, Zhaoying ; Hoo, Jason ; Guo, Shiping ; Guo, Wei ; Sun, Haiding ; Ye, Jichun
刊名	SUPERLATTICES AND MICROSTRUCTURES
	2019
卷号	129 页码:20-27
关键词	SURFACE-MORPHOLOGY GAN FILMS KINETICS QUALITY TERNARY INGAN BLUE
DOI	10.1016/j.spmi.2019.03.010
英文摘要	Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/18342]
专题	2019专题
作者单位	1.Sun, HD (reprint author), Univ Sci & Technol China, Sch Microelect, Hefei 230026, Anhui, Peoples R China. 2.Guo, W 3.Ye, JC (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式 GB/T 7714	Xu, Houqiang,Jiang, Jie'an,Sheikhi, Moheb,et al. Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates[J]. SUPERLATTICES AND MICROSTRUCTURES,2019,129:20-27.
APA	Xu, Houqiang.,Jiang, Jie'an.,Sheikhi, Moheb.,Chen, Zhaoying.,Hoo, Jason.,...&Ye, Jichun.(2019).Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates.SUPERLATTICES AND MICROSTRUCTURES,129,20-27.
MLA	Xu, Houqiang,et al."Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates".SUPERLATTICES AND MICROSTRUCTURES 129(2019):20-27.