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	Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors
	Liu, Huan; Cheng, Aijie; Lin, Zhaojun; Cui, Peng; Liu, Yan; Fu, Chen; Lv, Yuanjie; Feng, Zhihong; Luan, Chongbiao
刊名	SUPERLATTICES AND MICROSTRUCTURES
	2017
卷号	103页码:113-120
关键词	AIGaN/GaN HFETs Diffused Ohmic contact metal atoms Polarization Coulomb field scattering
DOI	10.1016/j.spmi.2017.01.031
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4589000
专题	山东大学
作者单位	1.Shandong Univ, Sch Math, Jinan 250100, Peoples R China. 2.Shandong Univ, Sch
推荐引用方式 GB/T 7714	Liu, Huan,Cheng, Aijie,Lin, Zhaojun,et al. Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors[J]. SUPERLATTICES AND MICROSTRUCTURES,2017,103:113-120.
APA	Liu, Huan.,Cheng, Aijie.,Lin, Zhaojun.,Cui, Peng.,Liu, Yan.,...&Luan, Chongbiao.(2017).Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors.SUPERLATTICES AND MICROSTRUCTURES,103,113-120.
MLA	Liu, Huan,et al."Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors".SUPERLATTICES AND MICROSTRUCTURES 103(2017):113-120.

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