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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films 期刊论文 固体薄膜, 2013 Yao, Jianke; Gong, Li; Xie, Lei; Zhang, Shengdong 收藏  |  浏览/下载：11/0  |  提交时间：2015/11/13 Amorphous indium gallium zinc oxide  Direct current sputtering  Radio-frequency sputtering  Oxygen vacancy  Fermi level  Work function   Synthesis, characterization, and photocatalytic properties of Ag modified hollow SiO2/TiO2 hybrid microspheres 期刊论文 applied catalysis b environmental, 2011 Zhao, Wei; Feng, Lili; Yang, Rong; Zheng, Jie; Li, Xingguo 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10 TiO2  Hollow spheres  Ag modified  Photocatalysis  TITANIUM-DIOXIDE NANOMATERIALS  VISIBLE-LIGHT PHOTOCATALYSIS  RHODAMINE-B  SILVER NANOPARTICLES  AQUEOUS-SOLUTION  TIO2 PARTICLES  FERMI-LEVEL  SPHERES  SILICA  DEGRADATION   Spin transport properties of single metallocene molecules attached to single-walled carbon nanotubes via nickel adatoms 期刊论文 journal of chemical physics, 2011 Wei, Peng; Sun, Lili; Benassi, Enrico; Shen, Ziyong; Sanvito, Stefano; Hou, Shimin 收藏  |  浏览/下载：9/0  |  提交时间：2015/11/10 ab initio calculations  adsorption  binding energy  carbon nanotubes  cobalt compounds  density functional theory  electronic density of states  Fermi level  Green&apos  iron compounds  magnetoelectronics  molecular magnetism  nickel compounds  organometallic compounds  SCF calculations  spin polarised transport  surface states  ELECTRONIC DEVICES  SPINTRONICS  TRANSISTORS  s function methods   Effect of Graphene Fermi Level on the Raman Scattering Intensity of Molecules on Graphene 期刊论文 acs nano, 2011 Xu, Hua; Xie, Liming; Zhang, Haoli; Zhang, Jin 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10 graphene Fermi level  chemical enhancement  electric field modulation  SURFACE-ENHANCED RAMAN  CHARGE-TRANSFER MECHANISM  SILVER ELECTRODE  SUBSTRATE  SERS  PHTHALOCYANINES  SPECTROSCOPY   Schottky-barrier height modulation of metal/In0.53Ga0.47As interfaces by insertion of atomic-layer deposited ultrathin Al2O3 期刊论文 journal of vacuum science technology b, 2011 Wang, Runsheng; Xu, Min; Ye, Peide D.; Huang, Ru 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 aluminium compounds  atomic layer deposition  Fermi level  gallium arsenide  indium compounds  MOSFET  Schottky barriers  METAL SOURCE/DRAIN  MOSFETS   Spin Hall effect on the kagome lattice with Rashba spin-orbit interaction 期刊论文 physical review b, 2009 Liu, Guocai; Zhang, Ping; Wang, Zhigang; Li, Shu-Shen 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/16 Berry phase  Fermi level  spin Hall effect  spin-orbit interactions  VAPOR-PHASE EPITAXY  HUBBARD-MODEL  GROUND-STATES  LINE GRAPHS  SEMICONDUCTORS  SPINTRONICS   Fermi-level pinning induced thermal instability in the effective work function of TaN in TaN/SiO2 gate stack 期刊论文 ieee electron device letters, 2004 Ren, C; Yu, HY; Kang, JF; Hou, YT; Li, ME; Wang, WD; Chan, DSH; Kwong, DL 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/12 fermi-level pinning  metal gate  TaN  work function  METAL  ELECTRODES  SIO2   SOME UNCLEAR CONCEPTS ASSOCIATED WITH ELECTRODE SOLUTION INTERFACE ENERGY PROFILES 期刊论文 bulletin of electrochemistry, 1994 ZHANG, TG; TONG, RT; JIANG, DL; CAI, SM 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/16 SEMICONDUCTOR ELECTROCHEMISTRY  INTERFACES  CHEMICAL POTENTIAL  FERMI LEVEL  VACUUM LEVEL  SEMICONDUCTOR