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CORC

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A study of indium incorporation in In-rich InGaN grown by MOVPE 期刊论文
applied surface science, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356
作者:  Wei HY;  Song HP
收藏  |  浏览/下载：139/13  |  提交时间：2010/04/22
Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 8, 页码: 4955-4959
Gao, HL (Gao Hong-Ling); Li, DL (Li Dong-Lin); Zhou, WZ (Zhou Wen-Zheng); Shang, LY (Shang Li-Yan); Wang, BQ (Wang Bao-Qiang); Zhu, ZP (Zhu Zhan-Ping); Zeng, YP (Zeng Yi-Ping)
收藏  |  浏览/下载：39/0  |  提交时间：2010/03/29
The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 12, 页码: 4104-4109
Wang XF; Zeng YP; Wang BQ; Zhu ZP; Du XQ; Li M; Chang BK
收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11
Influence of dislocation stress field on distribution of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:  Xu B
收藏  |  浏览/下载：55/0  |  提交时间：2010/04/11
Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate 期刊论文
journal of crystal growth, 2003, 卷号: 257, 期号: 3-4, 页码: 321-325
作者:  Li DB
收藏  |  浏览/下载：59/0  |  提交时间：2010/08/12
Strain relaxation of InP film directly grown on GaAs patterned compliant substrate 期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 71-76
作者:  Li DB
收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:  Xu B
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 1005-1009
作者:  Xu B
收藏  |  浏览/下载：125/19  |  提交时间：2010/08/12
Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE 期刊论文
journal of crystal growth, 1998, 卷号: 186, 期号: 1-2, 页码: 38-42
Wang HM; Fan TW; Wu J; Zeng YP; Dong JR; Kong MY
收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12
Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth 期刊论文
journal of crystal growth, 1998, 卷号: 194, 期号: 1, 页码: 25-30
Lu LW; Zhang YH; Yang GW; Wang J; Ge WK
收藏  |  浏览/下载：33/0  |  提交时间：2010/08/12

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