Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth

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	Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth
	Lu LW ; Zhang YH ; Yang GW ; Wang J ; Ge WK
刊名	journal of crystal growth
	1998
卷号	194 期号:1 页码:25-30
关键词	InGaAs/GaAs quantum wells DLTS measurements nonradiative centers THICKNESS
ISSN号	0022-0248
通讯作者	lu lw,chinese acad sci,inst semicond,integrated optoelect lab,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	when liquid phase epitaxy regrowth at 780 degrees c for 2 h is applied to the samples after molecular beam epitaxy, a decrease of the threshold current density in strained ingaas/gaas quantum well lasers by a factor of 3 to 4 is obtained. we suggest that this improvement is attributed to the reduction of nonradiative centers associated with deep levels at the three regions of the active region, the graded layer and the cladding layer. indeed, a significant reduction of deep center densities has been observed by using minority and majority carrier injection deep level transient spectroscopy measurements. (c) 1998 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13056]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu LW,Zhang YH,Yang GW,et al. Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth[J]. journal of crystal growth,1998,194(1):25-30.
APA	Lu LW,Zhang YH,Yang GW,Wang J,&Ge WK.(1998).Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth.journal of crystal growth,194(1),25-30.
MLA	Lu LW,et al."Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth".journal of crystal growth 194.1(1998):25-30.