Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

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	Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
	Xu B
刊名	journal of crystal growth
	2001
卷号	227 期号:0 页码:1005-1009
关键词	low dimensional structures molecular beam epitaxy nanomaterials INAS ISLANDS GAAS GROWTH GAAS(100) THICKNESS DENSITY
ISSN号	0022-0248
通讯作者	liu hy,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	the size and shape evolution of self-assembled inas quantum dots (qds) influenced by 2.0-ml inas seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ml deposition on gaas(1 0 0) substrate. based on comparisons with the evolution of inas islands on single layer samples at late growth stage, the bimodal size distribution of inas islands at 2.5-ml inas coverage and the formation of larger inas quantum dots at 2.9-ml deposition have been observed on the second inas layer. the further cross-sectional transmission electron microscopy measurement indicates the larger inas qds: at 2.9-ml deposition on the second layer are free of dislocation. in addition, the interpretations for the size and shape evolution of inas/gaas qds on the second layer will be presented. (c) 2001 elsevier science b.v. all lights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12186]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer[J]. journal of crystal growth,2001,227(0):1005-1009.
APA	Xu B.(2001).Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer.journal of crystal growth,227(0),1005-1009.
MLA	Xu B."Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer".journal of crystal growth 227.0(2001):1005-1009.