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科研机构
新疆理化技术研究所 [3]
近代物理研究所 [3]
湖南大学 [2]
西安交通大学 [1]
北京航空航天大学 [1]
内容类型
期刊论文 [10]
发表日期
2019 [10]
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Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:
Zheng, Qiwen
;
Cui, Jiangwei
;
Lu, Wu
;
Guo, Hongxia
;
Liu, Jie
收藏
  |  
浏览/下载:77/0
  |  
提交时间:2019/11/10
Single-event multiple-cell upsets (MCUs)
static random access memory
total ionizing dose (TID)
Effects of total ionizing dose on single event effect sensitivity of FRAMs
期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 95, 页码: 1-7
作者:
Ji, Qinggang
;
Liu, Jie
;
Li, Dongqing
;
Liu, Tianqi
;
Ye, Bing
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2019/11/10
Ferroelectric random access memory
Total ionizing dose
Single event effect
TCAD simulation
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
收藏
  |  
浏览/下载:101/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
Impact of TID on latch up induced by pulsed irradiation in CMOS circuits
期刊论文
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2019, 卷号: 440, 页码: 95-100
作者:
Li, Ruibin
;
He, Chaohui
;
Chen, Wei
;
Li, Junlin
;
Wang, Chenhui
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/19
Base recombination currents
Dose rate
Latch-ups
Oxide trapped charge
Pulsed irradiation
Shallow trench isolation
Surface recombinations
Total Ionizing Dose
Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors
期刊论文
IEEE Access, 2019, 卷号: Vol.7, 页码: 79989-79996
作者:
Shuyun Zheng
;
Yun Zeng
;
Zhuojun Chen
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/13
Field effect transistors
Semiconductor device modeling
Degradation
Electric potential
Logic gates
Molybdenum
Transition metal dichalcogenide (TMD)
field-effect transistor (FET)
total ionizing dose (TID)
surface potential
compact model
Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors
期刊论文
IEEE ACCESS, 2019, 卷号: Vol.7, 页码: 79989-79996
作者:
Zheng, SY
;
Zeng, Y
;
Chen, ZJ
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/12/17
Transition metal dichalcogenide (TMD)
field-effect transistor (FET)
total ionizing dose (TID)
surface potential
compact model
Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 页码: 710-715
作者:
Shu, Lei
;
Wang, Liang
;
Zhou, Xin
;
Li, Tong-De
;
Yuan, Zhang-Yi'an
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/30
400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistor (NLDMOSFET)
BVDS variations
laterally diffused metal-oxide-semiconductor (LDMOS)
radiation effects
SOI
technology computer-aided design (TCAD) simulations
total ionizing dose (TID)
Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor
期刊论文
ELECTRONICS, 2019, 卷号: 8, 期号: 6, 页码: 1-8
作者:
Liu, MH (Liu, Mohan)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1 ]
;
Li, XL (Li, Xiaolong)[ 1 ]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2020/04/03
saturation effect
gain degradation
total ionizing dose
gamma ray
bipolar transistor
A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs
期刊论文
RESULTS IN PHYSICS, 2019, 卷号: 13, 期号: 6, 页码: 1-5
作者:
Zhao, JH (Zhao, Jinghao)[ 1,2,3 ]
;
Zheng, QW (Zheng, Qiwen)[ 1,2 ]
;
Cui, JW (Cui, Jiangwei)[ 1,2 ]
;
Zhou, H (Zhou, Hang)[ 1,2,3 ]
;
Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2020/03/20
Hot carrier effect
PMOS
Total ionizing dose effect
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