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| High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288 作者: Yang YM(杨育梅) 收藏  |  浏览/下载:6/0  |  提交时间:2020/11/13
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| Temperature Dependence of Dynamic Performance Characterization of 1.2 kV SiC Power MOSFETs compared with Si IGBTs for Wide Temperature Applications 期刊论文 IEEE Transactions on Power Electronics, 2018 作者: Qi, Jinwei; Yang, Xu; Li, Xin; Tian, Kai; Mao, Zhangsong 收藏  |  浏览/下载:10/0  |  提交时间:2019/11/19
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| A Modified Single Pulse Method for Transient Thermal Impedance (TTI) Measurement of VDMOSFET Relates Gate Bias to the TTI Results 期刊论文 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2018, 卷号: 18, 页码: 383-391 作者: Tang, Yankun 收藏  |  浏览/下载:14/0  |  提交时间:2019/11/19
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| Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications 期刊论文 ELECTRONICS LETTERS, 2018, 卷号: 54, 页码: 899-900 作者: Zhu, Tianhua; Zhuo, Fang 收藏  |  浏览/下载:16/0  |  提交时间:2019/11/19
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| 功率器件封装中铝线键合工艺的提升及可靠性研究 学位论文 2018 作者: 蒲文斌 收藏  |  浏览/下载:7/0  |  提交时间:2019/11/26
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| A Passive Component Based Gate Drive Scheme for Negative Gate Voltage Spike Mitigation in a SiC-Based Dual-Active Bridge 会议论文 作者: Tian, Yidong; Yang, Xu; Xie, Ruiliang; Huang, Lang; Liu, Tao 收藏  |  浏览/下载:8/0  |  提交时间:2019/11/26
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| 基于 反激 变换 的高输入 电压 DC -DC 变换器 研 学位论文 2018 作者: 孔德志 收藏  |  浏览/下载:6/0  |  提交时间:2019/11/26
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| 面向碳化硅MOSFET模块的低电感封装与串联均压技术研究 学位论文 2018 作者: 任宇 收藏  |  浏览/下载:3/0  |  提交时间:2019/11/26
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| Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module 会议论文 作者: Wang, Jun; Burgos, Rolando; Boroyevich, Dushan; Liu, Zeng 收藏  |  浏览/下载:10/0  |  提交时间:2019/11/26
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| Normally-off hydrogen-terminated diamond field-effect transistor with AL(2)O(3) dielectric layer formed by thermal oxidation of Al 期刊论文 DIAMOND AND RELATED MATERIALS, 2018, 卷号: 81, 页码: 113-117 作者: Wang, Yan-Feng; Chang, Xiaohui; Zhang, Xiaofan; Fu, Jiao; Fan, Shuwei 收藏  |  浏览/下载:4/0  |  提交时间:2019/11/26
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