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反作用飞轮的可靠性研究 期刊论文
微电机, 2014, 期号: 12, 页码: 42166
包晗; 武俊峰; 吴一辉
收藏  |  浏览/下载：14/0  |  提交时间：2015/04/17
Metal-Gate Resistance with Skin Effect Consideration in Nanoscale MOSFETs for Millimeter-Wave ICs 会议论文
作者:  Lam, Sang;  Chan, Mansun
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/02
A design of negative high voltage nanosecond pulse circuit 期刊论文
Shenzhen Daxue Xuebao (Ligong Ban)/Journal of Shenzhen University Science and Engineering, 2014, 卷号: 31, 期号: [db:dc_citation_issue], 页码: 30-34
作者:  Zhao, Xin;  Zhang, Dongfang;  Liu, Jinyuan
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/03
Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio 期刊论文
ieee electron device letters, 2014
Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Jin, Chunyan; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10
Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask 期刊论文
ieee electron device letters, 2014
Xu, Zhe; Wang, Jinyan; Liu, Jingqian; Jin, Chunyan; Cai, Yong; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10
A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET 期刊论文
ieee电子器件汇刊, 2014
Qiu, Yingxin; Wang, Runsheng; Huang, Qianqian; Huang, Ru
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10
An analytic model for gate-all-around silicon nanowire tunneling field effect transistors 期刊论文
chinese physics b, 2014
Liu Ying; He Jin; Chan Mansun; Du Cai-Xia; Ye Yun; Zhao Wei; Wu Wen; Deng Wan-Ling; Wang Wen-Ping
收藏  |  浏览/下载：4/0  |  提交时间：2015/11/11
Derivative Superposition Numerical Method for Double-Gate MOSFET Transistor Application to RF Mixer 期刊论文
journal of computational and theoretical nanoscience, 2014
Zhu, Haifeng; Huang, Shuai; Shi, Min; Zhang, Wei; Sun, Ling; He, Lin; Zhu, Xiaoan; Wang, Cheng; He, Xiaomeng; Liang, Hailang; He, Qingxing; Du, Caixia; He, Jin
收藏  |  浏览/下载：4/0  |  提交时间：2015/11/16
Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer 期刊论文
ieee electron device letters, 2014
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin J.
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/16
Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs 期刊论文
semiconductor science and technology, 2014
Tan, Fei; Huang, Ru; An, Xia; Wu, Weikang; Feng, Hui; Huang, Liangxi; Fan, Jiewen; Zhang, Xing; Wang, Yangyuan
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13

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