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科研机构
半导体研究所 [12]
内容类型
期刊论文 [12]
发表日期
2010 [12]
学科主题
半导体材料 [12]
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发表日期:2010
学科主题:半导体材料
专题:半导体研究所
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Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 6, 页码: art. no. 067302
Guo Y (Guo Yan)
;
Liu XL (Liu Xiang-Lin)
;
Song HP (Song Hua-Ping)
;
Yang AL (Yang An-Li)
;
Zheng GL (Zheng Gao-Lin)
;
Wei HY (Wei Hong-Yuan)
;
Yang SY (Yang Shao-Yan)
;
Zhu QS (Zhu Qin-Sheng)
;
Wang ZG (Wang Zhan-Guo)
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  |  
浏览/下载:204/46
  |  
提交时间:2010/07/05
GE
GAAS
GROWTH
Formation trends of ordered self-assembled nanoislands on stepped substrates
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512
Liang S (Liang S.)
;
Zhu HL (Zhu H. L.)
;
Kong DH (Kong D. H.)
;
Wang W (Wang W.)
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/14
CHEMICAL-VAPOR-DEPOSITION
INAS QUANTUM DOTS
MOLECULAR-BEAM EPITAXY
GAAS
SURFACES
ISLANDS
GROWTH
FABRICATION
MIGRATION
ARRAYS
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers
期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting)
;
Deng SK (Deng Shukang)
;
Shen LX (Shen Lanxian)
;
Yang PZ (Yang Peizhi)
;
Tu JL (Tu Jielei)
;
Liao H (Liao Hua)
;
Xu YQ (Xu Yingqiang)
;
Niu ZC (Niu Zhichuan)
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/12/28
Gallium Arsenide
Gallium antimonide
Gallium antimonide/Aluminum antimonide
Superlattices
Molecular Beam Epitaxy
VAPOR-PHASE EPITAXY
SURFACE-MORPHOLOGY
GROWTH
SUPERLATTICES
TEMPERATURE
RELAXATION
DETECTORS
GAAS(001)
MOCVD
FILMS
Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism
期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 2, 页码: 1169-1174
Peng YC (Peng Ying-Cai)
;
Fan ZD (Fan Zhi-Dong)
;
Bai ZH (Bai Zhen-Hua)
;
Ma L (Ma Lei)
收藏
  |  
浏览/下载:141/29
  |  
提交时间:2010/04/21
silicon nanowires
Au-Si liquid droplet alloys
solid-liquid-solid growth
structural characteristics
SI NANOWIRES
NI CATALYSTS
Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110)
期刊论文
journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11 sp. iss. si, 页码: 7162-7166
Lin F (Lin Feng)
;
Fang ZY (Fang Zheyu)
;
Qu SC (Qu Shengchun)
;
Huang S (Huang Shan)
;
Song WT (Song Wentao)
;
Chi LF (Chi Lifeng)
;
Zhu X (Zhu Xing)
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  |  
浏览/下载:18/0
  |  
提交时间:2010/11/30
MOLECULAR-BEAM DEPOSITION
QUASIEPITAXIAL GROWTH
ORGANIC FILMS
LEED
PTCDA
STM
MONOLAYERS
GRAPHITE
In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 1, 页码: art. no. 013516
Yu JL (Yu J. L.)
;
Chen YH (Chen Y. H.)
;
Ye XL (Ye X. L.)
;
Jiang CY (Jiang C. Y.)
;
Jia CH (Jia C. H.)
收藏
  |  
浏览/下载:293/18
  |  
提交时间:2010/08/17
MOLECULAR-BEAM EPITAXY
STRAIN RELAXATION
GROWTH TEMPERATURE
INTERFACE
ALLOYS
GAAS
HETEROSTRUCTURES
MICROSTRUCTURE
GANXAS1-X
NITROGEN
Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
期刊论文
nanoscale research letters, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343
Liu JM (Liu J. M.)
;
Liu XL (Liu X. L.)
;
Xu XQ (Xu X. Q.)
;
Wang J (Wang J.)
;
Li CM (Li C. M.)
;
Wei HY (Wei H. Y.)
;
Yang SY (Yang S. Y.)
;
Zhu QS (Zhu Q. S.)
;
Fan YM (Fan Y. M.)
;
Zhang XW (Zhang X. W.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:146/21
  |  
提交时间:2010/08/17
Valence band offset
w-InN/h-BN heterojunction
X-ray photoelectron spectroscopy
Conduction band offset
Valence band offset
NEGATIVE ELECTRON-AFFINITY
INDIUM NITRIDE
WURTZITE GAN
SURFACE
FILM
ALN
TRANSPORT
EMISSION
NAXWO3
GROWTH
InN layers grown by MOCVD on SrTiO3 substrates
期刊论文
journal of crystal growth, 312 (3): jan 15 2010, 2010, 卷号: 312, 期号: 3, 页码: 373-377
作者:
Jia CH
;
Zhou XL
收藏
  |  
浏览/下载:116/26
  |  
提交时间:2010/04/13
TiO3
Growth behavior
MOCVD
InN 了CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
PRESSURE
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
期刊论文
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Liu B
;
Zhang Z
;
Zhang R
;
Fu DY
;
Xie ZL
;
Lu H
;
Schaff WJ
;
Song LH
;
Cui YC
;
Hua XM
;
Han P
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:196/52
  |  
提交时间:2010/04/28
BAND-GAP
TEMPERATURE-DEPENDENCE
ENERGY
SEMICONDUCTORS
SPECTRA
EPITAXY
GROWTH
LAYERS
Preparation and Optical Performance of Freestanding GaN Thick Films
期刊论文
rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
作者:
Wei TB
;
Yang JK
;
Duan RF
收藏
  |  
浏览/下载:58/10
  |  
提交时间:2011/07/05
GaN
HVPE
freestanding thick films
stress release
photoluminescence
VAPOR-PHASE EPITAXY
GROWTH
PRESSURE
HVPE
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