Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy

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	Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy
	Guo Y (Guo Yan) ; Liu XL (Liu Xiang-Lin) ; Song HP (Song Hua-Ping) ; Yang AL (Yang An-Li) ; Zheng GL (Zheng Gao-Lin) ; Wei HY (Wei Hong-Yuan) ; Yang SY (Yang Shao-Yan) ; Zhu QS (Zhu Qin-Sheng) ; Wang ZG (Wang Zhan-Guo)
刊名	chinese physics letters
	2010
卷号	27 期号:6 页码:art. no. 067302
关键词	GE GAAS GROWTH
通讯作者	guo, y, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail address: guoyan@semi.ac.cn ; xlliu@semi.ac.cn
合作状况	国内
英文摘要	x-ray photoelectron spectroscopy has been used to measure the valence band offset (vbo) at the gan/ge heterostructure interface. the vbo is directly determined to be 1.13 +/- 0.19 ev, according to the relationship between the conduction band offset delta e-c and the valence band offset delta e-v : delta e-c = e-g(gan) - e-g(ge) - delta e-v, and taking the room-temperature band-gaps as 3.4 and 0.67 ev for gan and ge, respectively. the conduction band offset is deduced to be 1.6 +/- 0.19 ev, which indicates a type-i band alignment for gan/ge. accurate determination of the valence and conduction band offsets is important for the use of gan/ge based devices.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-07-05t07:35:25z no. of bitstreams: 1 measurement of gange(001) heterojunction valence band offset by x-ray photoelectron spectroscopy.pdf: 549189 bytes, checksum: effb57c707baef3c4085e63e102a932e (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-07-05t07:46:56z (gmt) no. of bitstreams: 1 measurement of gange(001) heterojunction valence band offset by x-ray photoelectron spectroscopy.pdf: 549189 bytes, checksum: effb57c707baef3c4085e63e102a932e (md5); made available in dspace on 2010-07-05t07:46:56z (gmt). no. of bitstreams: 1 measurement of gange(001) heterojunction valence band offset by x-ray photoelectron spectroscopy.pdf: 549189 bytes, checksum: effb57c707baef3c4085e63e102a932e (md5) previous issue date: 2010; supported by the national natural science foundation of china under grant nos 60776015 and 60976008, the national basic research program of china under grant no 2006cb604907, and the high-technology r&d program of china (nos 2007aa03z402 and 2007aa03z451); 国内
学科主题	半导体材料
收录类别	SCI
资助信息	supported by the national natural science foundation of china under grant nos 60776015 and 60976008, the national basic research program of china under grant no 2006cb604907, and the high-technology r&d program of china (nos 2007aa03z402 and 2007aa03z451)
语种	英语
公开日期	2010-07-05
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11356]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Guo Y ,Liu XL ,Song HP ,et al. Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy[J]. chinese physics letters,2010,27(6):art. no. 067302.
APA	Guo Y .,Liu XL .,Song HP .,Yang AL .,Zheng GL .,...&Wang ZG .(2010).Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy.chinese physics letters,27(6),art. no. 067302.
MLA	Guo Y ,et al."Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy".chinese physics letters 27.6(2010):art. no. 067302.