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CORC

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Interface and transport properties of GaN/graphene junction in GaN-based LEDs 期刊论文
journal of physics d-applied physics, 2012, 卷号: 45, 期号: 50, 页码: 505102
Wang LC (Wang, Liancheng); Zhang YY (Zhang, Yiyun); Li X (Li, Xiao); Liu ZQ (Liu, Zhiqiang); Guo EQ (Guo, Enqing); Yi XY (Yi, Xiaoyan); Wang JX (Wang, Junxi); Zhu HW (Zhu, Hongwei); Wang GH (Wang, Guohong)
收藏  |  浏览/下载：15/0  |  提交时间：2013/03/20
Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 6, 页码: 061102
Wang LC (Wang, Liancheng); Zhang YY (Zhang, Yiyun); Li X (Li, Xiao); Liu ZQ (Liu, Zhiqiang); Guo EQ (Guo, Enqing); Yi XY (Yi, Xiaoyan); Wang JX (Wang, Junxi); Zhu HW (Zhu, Hongwei); Wang GH (Wang, Guohong)
收藏  |  浏览/下载：19/0  |  提交时间：2013/04/02
A Photovoltaic InAs Quantum-Dot Infrared Photodetector 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 4, 页码: art. no. 047801
Tang GH (Tang Guang-Hua); Xu B (Xu Bo); Jiang; LW (Jiang Li-Wen); Kong JX (Kong Jin-Xia); Kong; N (Kong Ning); Liang DC (Liang De-Chun); Liang P (Liang Ping); Ye XL (Ye Xiao-Ling); Jin P (Jin Peng); Liu FQ (Liu Feng-Qi); Chen YH (Chen Yong-Hai); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：271/36  |  提交时间：2010/04/28
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08
Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文
superlattices and microstructures, 2009, 卷号: 45, 期号: 2, 页码: 54-59
作者:  Zhang ML
收藏  |  浏览/下载：161/57  |  提交时间：2010/03/08
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
Luo, WJ; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Guo, LC; Li, JP; Liu, HX; Chen, YL; Yang, FH; Li, JM
收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM
收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Hou QF;  Zhang ML
收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09

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