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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 专题：新疆理化技术研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation 期刊论文 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214 作者:  Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3];  Zheng, QW (Zheng, Qiwen) [1] , [2];  Lu, W (Lu, Wu) [1] , [2];  Cui, JW (Cui, Jiangwei) [1] , [2];  Li, YD (Li, Yudong) [1] , [2] 收藏  |  浏览/下载：21/0  |  提交时间：2022/04/07 Total ionizing dose irradiation  UTBB FD-SOI  1  f noise   Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs 期刊论文 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 177, 期号: 3-4, 页码: 372-382 作者:  Cui, X (Cui, Xu) [1] , [2] , [3];  Cui, JW (Cui, Jiang-Wei) [1] , [2] , [3];  Zheng, QW (Zheng, Qi-Wen) [1] , [2] , [3];  Wei, Y (Wei, Ying) [1] , [2] , [3];  Li, YD (Li, Yu-Dong) [1] , [2] , [3] 收藏  |  浏览/下载：18/0  |  提交时间：2022/06/21 FinFET  1/f noise  TlD  CVS  bias dependence   Impact of High TID Irradiation on Stability of 65 nm SRAM Cells 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 卷号: 69, 期号: 5, 页码: 1044-1050 作者:  Cui, JW (Cui, Jiangwei) [1];  Zheng, QW (Zheng, Qiwen) [1];  Li, YD (Li, Yudong) [1];  Guo, Q (Guo, Qi) [1] 收藏  |  浏览/下载：19/0  |  提交时间：2022/06/21 SRAM cells  Radiation effects  Arrays  Stability criteria  Circuit stability  Voltage measurement  Logic gates  Stability  static random-access memory (SRAM) cell  total ionizing dose (TID)   Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias 期刊论文 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2022, 卷号: 17, 期号: 1, 页码: 121-127 作者:  Yang, ZK (Yang, Zhikang) [1] , [2];  Wen, L (Wen, Lin) [1];  Li, YD (Li, Yudong) [1];  Liu, BK (Liu, Bingkai) [1] , [2];  Fu, J (Fu, Jing) [1] , [2] 收藏  |  浏览/下载：21/0  |  提交时间：2022/06/21 Color CMOS Image Sensor  Radiation Damage  Total Ionizing Dose Effects  Bias Condition   Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429 作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1 收藏  |  浏览/下载：40/0  |  提交时间：2021/08/06 Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability   Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523 作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1 收藏  |  浏览/下载：40/0  |  提交时间：2021/12/06 Threshold voltage  TestingMOSFET circuits  Transistors  Standards  Logic gates  Fluctuations  Buried oxide (BOX)  silicon-on-insulator (SOI)  total ionizing dose (TID)