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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 专题：西安交通大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers 期刊论文 Microsystem Technologies, 2018 作者:  Huang, Huixiang;  Wei, Sufen;  Pan, Jinyan;  Xu, Wenbin;  Mei, Qiang 收藏  |  浏览/下载：6/0  |  提交时间：2019/11/19 Analytical results  Experimental extraction  Gaussian profiles  Non-uniform doping  Radiation-hardened  Silicon on insulator wafers  Subthreshold swing  Technology computer aided design   Analytical subthreshold current modeling of nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a vertical gaussian doping profile 会议论文 作者:  Wei, Sufen;  Zhang, Guohe;  Huang, Huixiang;  Liu, Jing;  Shao, Zhibiao 收藏  |  浏览/下载：6/0  |  提交时间：2019/11/19 Analysis of a high-performance ultra-thin body ultra-thin box silicon-on-insulator MOSFET with the lateral dual-gates: featuring the suppression of the DIBL 会议论文 作者:  Wei, Sufen;  Zhang, Guohe;  Shao, Zhibiao;  Geng, Li;  Yang, Cheng-Fu 收藏  |  浏览/下载：8/0  |  提交时间：2019/11/26 Comparison of the performance improvement for the two novel SOI-tunnel FETs with the lateral dual-gate and triple-gate 期刊论文 Microsystem Technologies, 2018 作者:  Wei, Sufen;  Zhang, Guohe;  Geng, Li;  Shao, Zhibiao;  Yang, Cheng-Fu 收藏  |  浏览/下载：10/0  |  提交时间：2019/11/26 Band to band tunneling  Compare and analyze  Modulating effect  Off-state current  On state current  Performance improvements  Tunnel field-effect transistors (TFET)  Tunneling barrier   Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile 期刊论文 IEEE Transactions on Nuclear Science, 2018, 卷号: 65, 页码: 2679-2690 作者:  Huang, Huixiang;  Wei, Sufen;  Pan, Jinyan;  Xu, Wenbin;  Chen, Chi-Cheng 收藏  |  浏览/下载：6/0  |  提交时间：2019/11/26 Gaussians  Integrated circuit modeling  Interface traps  MOS-FET  Short-channel effect  Silicon on insulator (SOI)  Threshold voltage modeling  Total dose radiation   Hardware Implementation for an Improved Full-Pixel Search Algorithm Based on Normalized Cross Correlation Method 期刊论文 ELECTRONICS, 2018, 卷号: 7 作者:  Zhang, Guohe;  Kuang, Zejie;  Wei, Sufen;  Huang, Kai;  Liang, Feng 收藏  |  浏览/下载：12/0  |  提交时间：2019/11/26 hardware implementation  full pixel search algorithm  digital speckle correlation measurement method   Modeling a Si homojunction SOI-Tunnel FET with configurable voltage difference on gates 会议论文 作者:  Wei, Sufen;  Zhang, Guohe;  Liu, Jing;  Huang, Huixiang;  Geng, Li 收藏  |  浏览/下载：13/0  |  提交时间：2019/11/26 Band to band tunneling  Channel region  N type silicon  Potential barriers  Silicon on insulator (SOI)  Technology computer aided design  Tunnel FET (TFET)  Voltage difference   Enhanced Radiation Hardness in SOI MOSFET With Embedded Tunnel Diode Layer 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 页码: 2369-2376 作者:  Huang, Huixiang;  Wei, Sufen;  Tang, Kai;  Pan, Jinyan;  Xu, Wenbin 收藏  |  浏览/下载：11/0  |  提交时间：2019/11/26 partially depleted silicon on insulator (PD SOI)  Body contact  floating body effects (FBEs)  tunnel diode   A compact subthreshold swing model of ultra-Thin body ultra-Thin box SOI MOSFETs with Gaussian doping profile 会议论文 作者:  Wei, Sufen;  Zhang, Guohe;  Liu, Jing;  Huang, Huixiang;  Geng, Li 收藏  |  浏览/下载：7/0  |  提交时间：2019/11/26 Charge centroid  Gaussian doping  Gaussian Doping Profiles  Non-uniform doping  Silicon on insulator (SOI)  Subthreshold swing  Technology computer aided design  Two Dimensional (2 D)   Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 卷号: 55, 期号: [db:dc_citation_issue] 作者:  Wei, Sufen;  Zhang, Guohe;  Shao, Zhibiao;  Huang, Huixiang;  Geng, Li 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/02