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	An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers
	Huang, Huixiang; Wei, Sufen; Pan, Jinyan; Xu, Wenbin; Mei, Qiang; Chen, Jinhai; Geng, Li; Zhang, Zhengxuan; Chen, Chi-Cheng
刊名	Microsystem Technologies
	2018
关键词	Analytical results Experimental extraction Gaussian profiles Non-uniform doping Radiation-hardened Silicon on insulator wafers Subthreshold swing Technology computer aided design
ISSN号	0946-7076
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2835297
专题	西安交通大学
推荐引用方式 GB/T 7714	Huang, Huixiang,Wei, Sufen,Pan, Jinyan,et al. An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers[J]. Microsystem Technologies,2018.
APA	Huang, Huixiang.,Wei, Sufen.,Pan, Jinyan.,Xu, Wenbin.,Mei, Qiang.,...&Chen, Chi-Cheng.(2018).An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers.Microsystem Technologies.
MLA	Huang, Huixiang,et al."An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers".Microsystem Technologies (2018).

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