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浏览/检索结果: 共24条，第1-10条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors 期刊论文 APPLIED PHYSICS LETTERS, 2017 Chiang, Hsiao-Cheng; Chang, Ting-Chang; Liao, Po-Yung; Chen, Bo-Wei; Tsao, Yu-Ching; Tsai, Tsung-Ming; Chien, Yu-Chieh; Yang, Yi-Chieh; Chen, Kuan-Fu; Yang, Chung-I; Hung, Yu-Ju; Chang, Kuan-Chang; Zhang, Sheng-Dong; Lin, Sung-Chun; Yeh, Cheng-Yen 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 IGZO TFTS  ZNO-CU  SEMICONDUCTORS  TRANSITIONS  IMPURITIES  OXIDE  SHIFT   Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode 期刊论文 NANOSCALE, 2017 Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M. 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 METAL-INSULATOR-TRANSITION  MEMORY  OXIDES  NANOCROSSBAR  RERAM   Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2016 Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M. 收藏  |  浏览/下载：9/0  |  提交时间：2017/12/03 ITO  RRAM  complementary resistance switching  oxygen  SUPERCRITICAL CO2 FLUID  RRAM  IMPROVEMENT  HYDROGEN  DEVICES  GATE  ELECTRODE  FILAMENT  STORAGE   Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2015 Chen, Ji; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Lou, Jen-Chung; Chu, Tian-Jian; Wu, Cheng-Hsien; Chen, Min-Chen; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Sze, Simon M. 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 RRAM  nitrogen buffering effect  electric field force  NH3 treatment  SUPERCRITICAL CO2 FLUID  SWITCHING MEMORY  RESISTANCE  IMPROVEMENT  RRAM  MECHANISM  UNIFORMITY  CONDUCTION  DEVICE   Influence of nitrogen buffering on oxygen in indium-tin-oxide capped resistive random access memory with NH3 treatment 其他 2015-01-01 Chen, Ji; Lou, Jen-Chung; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Influence of Nitrogen Buffering on Oxygen in Indium-Tin-Oxide Capped Resistive Random Access Memory with NH3 Treatment 其他 2015-01-01 Chen, Ji; Lou, Jen-Chung; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 RRAM  nitrogen buffering effect  NH3 treatment   Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor 期刊论文 应用物理学快报, 2014 Chen, Hsin-lu; Chang, Ting-Chang; Young, Tai-Fa; Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Huang, Sheng-Yao; Chen, Kai-Huang; Lou, J. C.; Chen, Min-Chen; Shih, Chih-Cheng; Huang, Syuan-Yong; Chen, Jung-Hui 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/11 RANDOM-ACCESS MEMORY  PASSIVATION  RRAM  TFT   Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory 期刊论文 ieee electron device letters, 2014 Shih, Chih-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chen, Jung-Hui; Chen, Kai-Huang; Young, Tai-Fa; Chen, Hsin-Lu; Lou, Jen-Chung; Chu, Tian-Jian; Huang, Syuan-Yong; Bao, Ding-Hua; Sze, Simon M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 ZnO  RRAM  ultra-violet light  current conduction mechanism  IMPROVEMENT  DEVICES   Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory 期刊论文 ieee electron device letters, 2014 Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Huang, Syuan-Yong; Chen, Wen-Jen; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Chen, Hsin-Lu; Liang, Shu-Ping; Syu, Yong-En; Sze, Simon M. 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10 Oxygen accumulation  indium tin oxide  Schottky emission  RRAM  RESISTIVE SWITCHING MEMORIES   Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory 期刊论文 ieee electron device letters, 2014 Chu, Tian-Jian; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Huang, Jen-Wei; Lou, Jen-Chung; Chen, Min-Chen; Huang, Syuan-Yong; Chen, Hsin-Lu; Syu, Yong-En; Bao, Dinghua; Sze, Simon M. 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/11 RRAM  hydrogen  resistive switching  tri-resistive states  HOPPING CONDUCTION  ORIGIN  RRAM