Investigating degradation behaviors induced by mobile Cu ions under high   temperature negative bias stress in a-InGaZnO thin film transistors

doi:10.1063/1.5004526

CORC > 北京大学 > 信息科学技术学院

	Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors
	Chiang, Hsiao-Cheng ; Chang, Ting-Chang ; Liao, Po-Yung ; Chen, Bo-Wei ; Tsao, Yu-Ching ; Tsai, Tsung-Ming ; Chien, Yu-Chieh ; Yang, Yi-Chieh ; Chen, Kuan-Fu ; Yang, Chung-I ; Hung, Yu-Ju ; Chang, Kuan-Chang ; Zhang, Sheng-Dong ; Lin, Sung-Chun ; Yeh, Cheng-Yen
刊名	APPLIED PHYSICS LETTERS
	2017
关键词	IGZO TFTS ZNO-CU SEMICONDUCTORS TRANSITIONS IMPURITIES OXIDE SHIFT
DOI	10.1063/1.5004526
英文摘要	This letter investigates the effect of negative bias temperature stress (NBTS) on amorphous InGaZnO4 thin film transistors with copper electrodes. After 2000 s of NBTS, an abnormal subthreshold swing and on-current (I-on) degradation is observed. The recovery of the Id-Vg curve after either annealing or positive bias temperature stress suggests that there are some native mobile copper ions in the active layer. Both the existence of copper and the degradation mechanism can be confirmed by AC stress with different frequencies and by transmission electron microscope energy-dispersive X-ray spectroscopy analysis. Published by AIP Publishing.; Ministry of Science and Technology [MOST-103-2112-M-110-011-MY3]; Southern Taiwan Science Park Bureau, Ministry of Science and Technology [105CE03]; SCI(E); ARTICLE; 13; 111
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/470758]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chiang, Hsiao-Cheng,Chang, Ting-Chang,Liao, Po-Yung,et al. Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors[J]. APPLIED PHYSICS LETTERS,2017.
APA	Chiang, Hsiao-Cheng.,Chang, Ting-Chang.,Liao, Po-Yung.,Chen, Bo-Wei.,Tsao, Yu-Ching.,...&Yeh, Cheng-Yen.(2017).Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors.APPLIED PHYSICS LETTERS.
MLA	Chiang, Hsiao-Cheng,et al."Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors".APPLIED PHYSICS LETTERS (2017).