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	Influence of nitrogen buffering on oxygen in indium-tin-oxide capped resistive random access memory with NH3 treatment
	Chen, Ji ; Lou, Jen-Chung ; Chang, Kuan-Chang ; Chang, Ting-Chang ; Tsai, Tsung-Ming ; Pan, Chih-Hung
	2015
英文摘要	We demonstrate the extra influence of a nitrogen buffering effect in the top indium-tin-oxide (ITO) electrode layer of resistive random access memory (RRAM) with an NH3 treatment. The nitrogen buffering effect in the switching layer cannot counteract the electric field force, leading to similar current-voltage (I-V) characteristics compared to the ITO/Hf:SiO2/TiN control structure RRAM. However, the effect in the ITO electrode layer, makes it easier for the redox reaction to occur, leading to improved endurance and concentrated voltages. ? 2015 IEEE.; EI
语种	英语
出处	11th IEEE International Conference on Advanced Semiconductor Integrated Circuits (ASIC), ASICON 2015
DOI标识	10.1109/ASICON.2015.7516973
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/449314]
专题	软件与微电子学院
推荐引用方式 GB/T 7714	Chen, Ji,Lou, Jen-Chung,Chang, Kuan-Chang,et al. Influence of nitrogen buffering on oxygen in indium-tin-oxide capped resistive random access memory with NH3 treatment. 2015-01-01.

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