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科研机构
北京大学 [19]
武汉大学 [3]
西安交通大学 [1]
内容类型
其他 [23]
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2017 [2]
2016 [10]
2015 [3]
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2012 [2]
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Extraction of Ridge Lines from Grid DEMs with the Steepest Ascent Method Based on Constrained Direction
其他
2017-01-01
作者:
Jiang, Wenping
;
Xi, Daping
;
Deng, Xiaolong
;
Huang, Lina
;
Ying, Shen
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/05
Grid DEM
Ridge lines
Constrained connecting direction
Overland flow simulation
Steepest ascent method
Extraction of Ridge Lines from Grid DEMs with the Steepest Ascent Method Based on Constrained Direction
其他
2017-01-01
作者:
Jiang, Wenping
;
Xi, Daping
;
Deng, Xiaolong
;
Huang, Lina
;
Ying, Shen
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/05
Grid DEM
Ridge lines
Constrained connecting direction
Overland flow simulation
Steepest ascent method
ESD Reliability Improvement of the 0.25-mu m 60-V Power nLDMOS with Discrete Embedded SCRs Separated by STI Structures
其他
2016-01-01
Chen, Shen-Li
;
Wu, Yi-Cih
;
Lin, Jia-Ming
;
Yang, Chih-Hung
;
Yen, Chih-Ying
;
Chen, Kuei-Jyun
;
Chen, Hung-Wei
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Electrostatic discharge (ESD)
N-channel lateral-diffused MOSFET (nLDMOS)
Secondary breakdown current (I-t2)
Shallow-trench isolation (STI)
Silicon-controller rectifier (SCR)
ESD Reliability Evaluations of the 60-V nLDMOS by the Drain-side Discrete SCRs
其他
2016-01-01
Chen, Shen-Li
;
Chen, Kuei-Jyun
;
Wu, Yi-Cih
;
Lin, Jia-Ming
;
Yang, Chih-Hung
;
Yen, Chih-Ying
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
LDMOS
Design on ESD Robustness of Source-side Discrete Distribution in the 60-V High-Voltage nLDMOS Devices
其他
2016-01-01
Chen, Shen-Li
;
Yang, Chih-Hung
;
Yen, Chih-Ying
;
Chen, Kuei-Jyun
;
Wu, Yi-Cih
;
Lin, Jia-Ming
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
LDMOS
ESD reliability improvement of the 0.25-��m 60-V power nLDMOS with discrete embedded SCRs separated by STI structures
其他
2016-01-01
Chen, Shen-Li
;
Wu, Yi-Cih
;
Lin, Jia-Ming
;
Yang, Chih-Hung
;
Yen, Chih-Ying
;
Chen, Kuei-Jyun
;
Chen, Hung-Wei
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
ESD-reliability characterizations of a 45-V p-channel LDMOS-SCR with the discrete-cathode end
其他
2016-01-01
Chen, Shen-Li
;
Huang, Yu-Ting
;
Wu, Yi-Cih
;
Lin, Jia-Ming
;
Yang, Chih-Hung
;
Yen, Chih-Ying
;
Chen, Kuei-Jyun
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Design on ESD robustness of source-side discrete distribution in the 60-V high-voltage nLDMOS devices
其他
2016-01-01
Chen, Shen-Li
;
Yang, Chih-Hung
;
Yen, Chih-Ying
;
Chen, Kuei-Jyun
;
Wu, Yi-Cih
;
Lin, Jia-Ming
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/12/03
ESD reliability evaluations of the 60-V nLDMOS by the drain-side discrete SCRs
其他
2016-01-01
Chen, Shen-Li
;
Chen, Kuei-Jyun
;
Wu, Yi-Cih
;
Lin, Jia-Ming
;
Yang, Chih-Hung
;
Yen, Chih-Ying
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/12/03
ESD-Reliability Characterizations of a 45-V p-Channel LDMOS-SCR with the Discrete-Cathode End
其他
2016-01-01
Chen, Shen-Li
;
Huang, Yu-Ting
;
Wu, Yi-Cih
;
Lin, Jia-Ming
;
Yang, Chih-Hung
;
Yen, Chih-Ying
;
Chen, Kuei-Jyun
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
P-type laterally-diffused metal oxide semiconductor (pLDMOS)
Electrostatic Discharge (ESD)
Holding voltage (V-h)
Secondary breakdown current (I-t2)
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