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	Design on ESD robustness of source-side discrete distribution in the 60-V high-voltage nLDMOS devices
	Chen, Shen-Li ; Yang, Chih-Hung ; Yen, Chih-Ying ; Chen, Kuei-Jyun ; Wu, Yi-Cih ; Lin, Jia-Ming
	2016
英文摘要	The electrostatic-discharge (ESD) protection capability of HV nLDMOS devices with the source-side engineering by a TSMC 0.25��m 60-V is investigated in this paper. It can be found that a pure nLDMOS device has a poor anti-ESD ability (It2 = 1.833A). At the same time, if an nLDMOS was embedded with an SCR npn-(pnp-) arranged type in the drain-side, the corresponding secondary breakdown-current values are promoted 19.4% (24.8%) as comparing with a traditional nLDMOS. Furthermore, if the source discrete methodology is applied for the nLDMOS-embedded SCR npn-(pnp-) arranged type, the maximum secondary breakdown current value are promoted 24.1% (>281.9%). Finally, it can be concluded that a discrete distribution in the source region of a pure nLDMOS will upgrade the anti-ESD capability effectively, and it is especially for the nLDMOS-SCR pnp-arranges type. ? 2016 IEEE.; EI
语种	英语
出处	3rd IEEE International Conference on Consumer Electronics-Taiwan, ICCE-TW 2016
DOI标识	10.1109/ICCE-TW.2016.7521041
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/449325]
专题	软件与微电子学院
推荐引用方式 GB/T 7714	Chen, Shen-Li,Yang, Chih-Hung,Yen, Chih-Ying,et al. Design on ESD robustness of source-side discrete distribution in the 60-V high-voltage nLDMOS devices. 2016-01-01.

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