QQ客服 官方微博 反馈留言

	ESD Reliability Improvement of the 0.25-mu m 60-V Power nLDMOS with Discrete Embedded SCRs Separated by STI Structures
	Chen, Shen-Li ; Wu, Yi-Cih ; Lin, Jia-Ming ; Yang, Chih-Hung ; Yen, Chih-Ying ; Chen, Kuei-Jyun ; Chen, Hung-Wei
	2016
关键词	Electrostatic discharge (ESD) N-channel lateral-diffused MOSFET (nLDMOS) Secondary breakdown current (I-t2) Shallow-trench isolation (STI) Silicon-controller rectifier (SCR)
英文摘要	In this paper, the electrostatic-discharge (ESD) robustness improvement by modulating the drain-side embedded SCR of an HV nLDMOS device is investigated via a TSMC 0.25 mu m 60 V process. After a systematic layout design and data analysis, it can be found that the holding voltage (V-h) of an nLDMOS with a parasitic SCR "npn"-arranged type & thin oxide (OD) discrete (i.e. separated by the shallow-trench isolation (STI) structure) distribution in the drain-side have greatly increased with the parasitic SCR OD decreasing. Therefore, a high Vh value in the OD discrete parameter 2 (DIS-2) can be obtained about 13.3 V. On the other hand, the trigger voltage (V-t1) values and the holding voltage (V-h) values of the nLDMOS DUTs with a parasitic SCR "pnp"-arranged type & OD discrete distribution in the drain-side are slowly increased with the parasitic-SCR OD decreasing. The best Vh value in the "pnp"arranged type & OD discrete parameter 2 (DIS-2) is about 14.4 V. Meanwhile, the secondary breakdown current (I-t2) values of this type are greater than 7 A except for the OD discrete parameter 2 and 3. Therefore, an appropriate layout of nLDMOS embedded with a drain-side "pnp" arranged type & OD discrete distribution that can yield high ESD and latch-up (LU) robustness levels.; CPCI-S(ISTP); jackchen@nuu.edu.tw
语种	英语
出处	8th IEEE International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/459819]
专题	软件与微电子学院
推荐引用方式 GB/T 7714	Chen, Shen-Li,Wu, Yi-Cih,Lin, Jia-Ming,et al. ESD Reliability Improvement of the 0.25-mu m 60-V Power nLDMOS with Discrete Embedded SCRs Separated by STI Structures. 2016-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。