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High frequency capacitance-voltage characterization of Al2O3/ZrO2/Al2O3 in fully depleted silicon-on-insulator metal-oxide-semiconductor capacitors 期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 25, 页码: 5238-5240
Zhang, NL; Song, ZT; Shen, QW; Wu, YJ; Liu, QB; Lin, CL; Duo, XZ; Zheng, LR; Ding, YF; Zhu, ZQ
收藏  |  浏览/下载:8/0  |  提交时间:2012/03/24
Defect and strain in hydrogen and helium coimplanted single-crystal silicon 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 卷号: 34, 期号: 1, 页码: 5-11
Duo, XZ; Liu, WL; Xing, S; Zhang, M; Fu, XR; Lin, CL; Hu, PG; Wang, SX; Wang, LM
收藏  |  浏览/下载:9/0  |  提交时间:2012/03/24
Comparison between the different implantation orders in H+ and He+ coimplantation 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 卷号: 34, 期号: 4, 页码: 477-482
Duo, XZ; Liu, WL; Zhang, MA; Wang, LW; Lin, CL; Okuyama, M; Noda, M; Cheung, WY; Chu, PK; Hu, PG; Wang, SX; Wang, LM
收藏  |  浏览/下载:20/0  |  提交时间:2012/03/24
Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 90, 期号: 8, 页码: 3780-3786
Duo, XH; Liu, WL; Zhang, M; Wang, LW; Lin, CL; Okuyama, M; Noda, M; Cheung, WY; Wong, SP; Chu, PK; Hu, PG; Wang, SX; Wang, LM
收藏  |  浏览/下载:12/0  |  提交时间:2012/03/24
Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers 期刊论文
JOURNAL OF APPLIED PHYSICS, 1999, 卷号: 85, 期号: 1, 页码: 94-98
Zhang, MA; Lin, CL; Duo, XZ; Lin, ZX; Zhou, ZY
收藏  |  浏览/下载:17/0  |  提交时间:2012/03/25


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