Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing

	Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing
	Duo, XH ; Liu, WL ; Zhang, M ; Wang, LW ; Lin, CL ; Okuyama, M ; Noda, M ; Cheung, WY ; Wong, SP ; Chu, PK ; Hu, PG ; Wang, SX ; Wang, LM
刊名	JOURNAL OF APPLIED PHYSICS
	2001
卷号	90 期号:8 页码:3780-3786
关键词	INDUCED EXFOLIATION INDUCED DEFECTS COIMPLANTATION MECHANISM CAVITIES AU
ISSN号	0021-8979
通讯作者	Duo, XH, Chinese Acad Sci, Shanghai Inst Met, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95751]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Duo, XH,Liu, WL,Zhang, M,et al. Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing[J]. JOURNAL OF APPLIED PHYSICS,2001,90(8):3780-3786.
APA	Duo, XH.,Liu, WL.,Zhang, M.,Wang, LW.,Lin, CL.,...&Wang, LM.(2001).Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing.JOURNAL OF APPLIED PHYSICS,90(8),3780-3786.
MLA	Duo, XH,et al."Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing".JOURNAL OF APPLIED PHYSICS 90.8(2001):3780-3786.