Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers

	Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers
	Zhang, MA ; Lin, CL ; Duo, XZ ; Lin, ZX ; Zhou, ZY
刊名	JOURNAL OF APPLIED PHYSICS
	1999
卷号	85 期号:1 页码:94-98
关键词	ION-IMPLANTATION SILICON-OXIDES COPPER TECHNOLOGY BREAKDOWN NICKEL CARBON
ISSN号	0021-8979
通讯作者	Zhang, MA, Acad Sinica, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/99136]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Zhang, MA,Lin, CL,Duo, XZ,et al. Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers[J]. JOURNAL OF APPLIED PHYSICS,1999,85(1):94-98.
APA	Zhang, MA,Lin, CL,Duo, XZ,Lin, ZX,&Zhou, ZY.(1999).Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers.JOURNAL OF APPLIED PHYSICS,85(1),94-98.
MLA	Zhang, MA,et al."Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers".JOURNAL OF APPLIED PHYSICS 85.1(1999):94-98.