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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation 期刊论文 Journal of Applied Physics, 2017, 卷号: 121, 页码: 193901 作者:  X. L. Zeng;  J. L. Yu;  S. Y. Cheng;  Y. F. Lai, Y. H. Chen;  W. Huang 收藏  |  浏览/下载：36/0  |  提交时间：2018/05/23 A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition 期刊论文 ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31 作者:  X. F. Liu;  z G. G. Yan;  Z. W. Shen;  Z. X.Wen;  L. X. Tian 收藏  |  浏览/下载：32/0  |  提交时间：2018/06/15 Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well 期刊论文 solid state communications, 2007, 卷号: 143, 期号: 6-7, 页码: 300-303 Zhou, WZ (Zhou, W. Z.); Lin, T (Lin, T.); Shang, LY (Shang, L. Y.); Yu, G (Yu, G.); Huang, ZM (Huang, Z. M.); Guo, SL (Guo, S. L.); Gui, YS (Gui, Y. S.); Dai, N (Dai, N.); Chu, JH (Chu, J. H.); Cui, LJ (Cui, L. J.); Li, DL (Li, D. L.); Gao, HL (Gao, H. L.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/29 quantum well   Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Ning, J (Ning, J.); Zhao, YM (Zhao, Y. M.); Luo, MC (Luo, M. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：89/9  |  提交时间：2010/03/29 AVALANCHE PHOTODIODES  AREA   Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Zhao, YM (Zhao, Y. M.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：162/28  |  提交时间：2010/03/29 micro-raman  4H-SiC  defects  3C-inclusions  triangle-shaped inclusion  EPITAXIAL LAYERS  SILICON-CARBIDE   Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278 Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.) 收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11 4H-SiC  homoepitaxial layers  surface morphological defect  optical microscopy  SILICON-CARBIDE  DISLOCATIONS  FILMS   Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Sun, GS (Sun, G. S.); Liu, XF (Liu, X. F.); Gong, QC (Gong, Q. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Li, JY (Li, J. Y.); Zeng, YP (Zeng, Y. P.); Li, JM (Li, J. M.) 收藏  |  浏览/下载：166/18  |  提交时间：2010/03/29 4H-SiC