Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation

	Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation
	X. L. Zeng; J. L. Yu; S. Y. Cheng; Y. F. Lai, Y. H. Chen; W. Huang
刊名	Journal of Applied Physics
	2017
卷号	121 页码:193901
学科主题	半导体材料
公开日期	2018-05-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28299]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	X. L. Zeng,J. L. Yu,S. Y. Cheng,et al. Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation[J]. Journal of Applied Physics,2017,121:193901.
APA	X. L. Zeng,J. L. Yu,S. Y. Cheng,Y. F. Lai, Y. H. Chen,&W. Huang.(2017).Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation.Journal of Applied Physics,121,193901.
MLA	X. L. Zeng,et al."Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation".Journal of Applied Physics 121(2017):193901.