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Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers 期刊论文
IEEE Electron Device Letters, 2016, 卷号: 37, 期号: 9, 页码: 1166 - 1169
Yanhua Zhang; Wenquan Ma; Jianliang Huang; Yulian Cao; Ke Liu; Wenjun Huang; Chengcheng Zhao; Haiming Ji; Tao Yang
收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10
Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate 期刊论文
Applied Physics Letters, 2015, 卷号: 107, 期号: 4, 页码: 041103
Ke Liu; Wenquan Ma; Jianliang Huang; Yanhua Zhang; Yulian Cao; Wenjun Huang; Shuai Luo; Tao Yang
收藏  |  浏览/下载:28/0  |  提交时间:2016/03/23
Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal 期刊论文
solid state communications, 2015, 卷号: 224, 页码: 34-36
Jianliang Huang; Wenquan Ma; Yanhua Zhang; Yulian Cao; Ke Liu; Wenjun Huang; Shuai Luo; Haiming Ji; Tao Yang
收藏  |  浏览/下载:30/0  |  提交时间:2016/03/23
Interface effect on structural and optical properties of type II InAs/GaSb superlattices 期刊论文
journal of crystal growth, 2014, 卷号: 407, 页码: 37-41
Huang, Jianliang; Ma, Wenquan; Wei, Yang; Zhang, Yanhua; Cui, Kai; Shao, Jun
收藏  |  浏览/下载:23/0  |  提交时间:2015/03/16
Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004
Xiaolu Guo, Wenquan Ma, Jianliang Huang, Yanhua Zhang, Yang Wei, Kai Cui, Yulian Cao and Qiong Li
收藏  |  浏览/下载:22/0  |  提交时间:2014/04/09
Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004
Guo, Xiaolu; Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao, Yulian; Li, Qiong
收藏  |  浏览/下载:21/0  |  提交时间:2013/10/08
540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier 期刊论文
ieee electron device letters, 2013, 卷号: 34, 期号: 6, 页码: 759-761
Cui, Kai; Ma, Wenquan; Zhang, Yanhua; Huang, Jianliang; Wei, Yang; Cao, Yulian; Guo, Xiaolu; Li, Qiong
收藏  |  浏览/下载:19/0  |  提交时间:2013/08/27
In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces. 期刊论文
nanoscale research letters, 2013, 卷号: 8, 页码: 298
Shujie Wu, Yonghai Chen, Jinling Yu, Hansong Gao, Chongyun Jiang, Jianliang Huang, Yanhua Zhang, Yang Wei, Wenquan Ma
收藏  |  浏览/下载:18/0  |  提交时间:2014/03/17
Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity 期刊论文
zhang, yanhua1 ; ma, wenquan1 ; wei, yang1 ; cao, yulian1 ; huang, jianliang1 ; cui, kai1 ; guo, xiaolu1, 2012, 卷号: 100, 期号: 17, 页码: 173511
Zhang, Yanhua; Ma, Wenquan; Wei, Yang; Cao, Yulian; Huang, Jianliang; Cui, Kai; Guo, Xiaolu
收藏  |  浏览/下载:14/0  |  提交时间:2013/04/19
Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature 期刊论文
physica e-low-dimensional systems & nanostructures, 2012, 卷号: 45, 页码: 173-176
Cui K (Cui, Kai); Ma WQ (Ma, Wenquan); Huang JL (Huang, Jianliang); Wei Y (Wei, Yang); Zhang YH (Zhang, Yanhua); Cao YL (Cao, Yulian); Gu YX (Gu, Yongxian); Yang T (Yang, Tao)
收藏  |  浏览/下载:19/0  |  提交时间:2013/04/02


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