Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate

	Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate
	Ke Liu ; Wenquan Ma ; Jianliang Huang ; Yanhua Zhang ; Yulian Cao ; Wenjun Huang ; Shuai Luo ; Tao Yang
刊名	Applied Physics Letters
	2015
卷号	107 期号:4 页码:041103
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2016-03-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26789]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Ke Liu,Wenquan Ma,Jianliang Huang,et al. Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate[J]. Applied Physics Letters,2015,107(4):041103.
APA	Ke Liu.,Wenquan Ma.,Jianliang Huang.,Yanhua Zhang.,Yulian Cao.,...&Tao Yang.(2015).Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate.Applied Physics Letters,107(4),041103.
MLA	Ke Liu,et al."Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate".Applied Physics Letters 107.4(2015):041103.