Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal

	Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal
	Jianliang Huang ; Wenquan Ma ; Yanhua Zhang ; Yulian Cao ; Ke Liu ; Wenjun Huang ; Shuai Luo ; Haiming Ji ; Tao Yang
刊名	solid state communications
	2015
卷号	224 页码:34-36
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2016-03-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26792]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Jianliang Huang,Wenquan Ma,Yanhua Zhang,et al. Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal[J]. solid state communications,2015,224:34-36.
APA	Jianliang Huang.,Wenquan Ma.,Yanhua Zhang.,Yulian Cao.,Ke Liu.,...&Tao Yang.(2015).Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal.solid state communications,224,34-36.
MLA	Jianliang Huang,et al."Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal".solid state communications 224(2015):34-36.