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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Determination of polar C-plane and nonpolar A-plane AlN-GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文 physica status solidi (b), 2013, 卷号: 1, 期号: 4 Huijie Li, Xianglin Liu, Ling Sang, Jianxia Wang, Dongdong Jin, Heng Zhang, Shaoyan Yang, Shuman Liu, Wei Mao, Yue Hao, Qinsheng Zhu, Zhanguo Wang 收藏  |  浏览/下载：19/0  |  提交时间：2014/03/17 Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文 applied physics letters, 2013, 卷号: 103, 期号: 23, 页码: 232109 Li, Huijie; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Wang, Jianxia; Zhang, Heng; Dong Jin, Dong; Feng, Yuxia; Yang, Shaoyan; Wang, Lianshan; Zhu, Qinsheng; Wang, Zhan-Guo 收藏  |  浏览/下载：28/0  |  提交时间：2014/03/17 Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures 期刊论文 applied physics letters, 2012, 卷号: 100, 期号: 8, 页码: 082101 Liu, Guipeng; Wu, Ju; Zhao, Guijuan; Liu, Shuman; Mao, Wei; Hao, Yue; Liu, Changbo; Yang, Shaoyan; Liu, Xianglin; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：20/0  |  提交时间：2013/05/07 Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy 期刊论文 nanoscale research letters, 2012, 卷号: 7, 页码: 562 Wei W (Wei, Wei); Qin ZX (Qin, Zhixin); Fan SF (Fan, Shunfei); Li ZW (Li, Zhiwei); Shi K (Shi, Kai); Zhu QS (Zhu, Qinsheng); Zhang GY (Zhang, Guoyi) 收藏  |  浏览/下载：43/0  |  提交时间：2013/04/18 Calculation of discrepancies in measured valence band offsets of heterojunctions with different crystal polarities 期刊论文 journal of applied physics, 2012, 卷号: 112, 期号: 11, 页码: 113712 Li HJ (Li, Huijie); Liu XL (Liu, Xianglin); Wang JX (Wang, Jianxia); Jin DD (Jin, Dongdong); Zhang H (Zhang, Heng); Yang SY (Yang, Shaoyan); Liu SM (Liu, Shuman); Mao W (Mao, Wei); Hao Y (Hao, Yue); Zhu QS (Zhu, QinSheng); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/26 Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy 期刊论文 journal of applied physics, 2010, 卷号: 107, 期号: 10, 页码: art. no. 104510 Xu XQ (Xu Xiaoqing); Liu XL (Liu Xianglin); Guo Y (Guo Yan); Wang J (Wang Jun); Song HP (Song Huaping); Yang SY (Yang Shaoyan); Wei HY (Wei Hongyuan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：182/49  |  提交时间：2010/06/18 PHOTOEMISSION-SPECTROSCOPY  PRECISE DETERMINATION  GA-FACE  SURFACE  ALN  HETEROJUNCTIONS  DISCONTINUITY  LEVEL   The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system 期刊论文 crystengcomm, 2010, 卷号: 12, 期号: 11, 页码: 3936-3941 Song HP (Song Huaping); Guo Y (Guo Yan); Yang A (Yang Anli); Wei HY (Wei Hongyuan); Xu XQ (Xu Xiaoqing); Liu JM (Liu Jianming); Yang SY (Yang Shaoyan); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：23/0  |  提交时间：2010/11/14 INDIUM-PHOSPHIDE NANOWIRES   Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy 期刊论文 applied surface science, 2010, 卷号: 256, 期号: 23, 页码: 7327-7330 Zheng GL (Zheng Gaolin); Wang J (Wang Jun); Liu XL (Liu Xianglin); Yang AL (Yang Anli); Song HP (Song Huaping); Guo Y (Guo Yan); Wei HY (Wei Hongyuan); Jiao CM (Jiao Chunmei); Yang SY (Yang Shaoyan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：167/22  |  提交时间：2010/08/17 MgO  Rutile  Band offset  X-ray photoelectron spectroscopy  Gate dielectric  Dye-sensitized solar cells   Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2007, 卷号: 91, 期号: 16, 页码: art.no.162104 Zhang RQ (Zhang Riqing); Zhang PF (Zhang Panfeng); Kang TT (Kang Tingting); Fan HB (Fan Haibo); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Wei HY (Wei Hongyuan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 INN   Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文 optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231 Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua) 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 in doping  cracks  Si(111) substrate  LT-AlGaN interlayer  metalorganic chemical vapor deposition  GaN  PHASE EPITAXY  INDIUM-SURFACTANT  OPTICAL-PROPERTIES  SI(111)  STRESS  FILMS