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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文 applied physics a: materials science and processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 Bi, Yang; Wang, XiaoLiang; Yang, CuiBai; Xiao, HongLing; Wang, CuiMei; Peng, EnChao; Lin, DeFeng; Feng, Chun; Jiang, LiJuan, 收藏  |  浏览/下载：16/0  |  提交时间：2012/06/14 Poisson equation   Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003 Bi, Yang; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yang, Cuibai; Peng, Enchao; Lin, Defeng; Feng, Chun; Jiang, Lijuan, 收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14 Aluminum  Electron mobility  Gallium nitride  High electron mobility transistors  Indium  Poisson equation  Polarization  Two dimensional electron gas   The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文 european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102 Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ 收藏  |  浏览/下载：36/0  |  提交时间：2012/01/06 ALGAN/GAN/INGAN/GAN DH-HEMTS  FIELD-EFFECT TRANSISTORS  ALGAN/GAN  POLARIZATION  PASSIVATION  HFETS  GHZ   The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文 applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 作者:  Bi Y;  Lin DF;  Peng EC 收藏  |  浏览/下载：19/0  |  提交时间：2011/09/14 2-DIMENSIONAL ELECTRON-GAS  ALGAN/GAN/INGAN/GAN DH-HEMTS  MILLIMETER-WAVE APPLICATIONS  FIELD-EFFECT TRANSISTORS  HETEROJUNCTION FETS  HETEROSTRUCTURES  PASSIVATION  CONFINEMENT  PERFORMANCE  BARRIERS