The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure

	The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
	Bi, Yang ; Wang, XiaoLiang ; Yang, CuiBai ; Xiao, HongLing ; Wang, CuiMei ; Peng, EnChao ; Lin, DeFeng ; Feng, Chun ; Jiang, LiJuan,
刊名	applied physics a: materials science and processing
	2011
卷号	104 期号:4 页码:1211-1216
关键词	Poisson equation
ISSN号	09478396
通讯作者	bi, y.(ybi@semi.ac.cn)
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2012-06-14
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23040]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Bi, Yang,Wang, XiaoLiang,Yang, CuiBai,et al. The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure[J]. applied physics a: materials science and processing,2011,104(4):1211-1216.
APA	Bi, Yang.,Wang, XiaoLiang.,Yang, CuiBai.,Xiao, HongLing.,Wang, CuiMei.,...&Jiang, LiJuan,.(2011).The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure.applied physics a: materials science and processing,104(4),1211-1216.
MLA	Bi, Yang,et al."The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure".applied physics a: materials science and processing 104.4(2011):1211-1216.