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科研机构
半导体研究所 [14]
内容类型
会议论文 [14]
发表日期
2008 [2]
2007 [4]
2006 [4]
2004 [2]
2000 [2]
学科主题
半导体材料 [14]
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学科主题:半导体材料
内容类型:会议论文
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Simulation and fabrication of the SiC-based clamped-clamped filter
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Zhao, YM
;
Ning, J
;
Sun, GS
;
Liu, XF
;
Wang, L
;
Ji, G
;
Wang, L
;
Zhao, WS
;
Li, JM
;
Yang, FH
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/03/09
MICROMECHANICAL RESONATORS
FREQUENCY
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Ji, G
;
Sun, GS
;
Ning, J
;
Liu, XF
;
Zhao, YM
;
Wang, L
;
Zhao, WS
;
Zeng, YP
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
Kinetic Monte Carlo simulation of semiconductor quantum dot growth
会议论文
china international conference on nanoscience and technology (chinanano 2005), beijing, peoples r china, jun 09-11, 2005
Zhao C
;
Chen YH
;
Sun J
;
Lei W
;
Cui CX
;
Yu LK
;
Li K
;
Wang ZG
收藏
  |  
浏览/下载:269/88
  |  
提交时间:2010/03/29
Monte Carlo simulation
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Ning, J (Ning, J.)
;
Zhao, YM (Zhao, Y. M.)
;
Luo, MC (Luo, M. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Zeng, YP (Zeng, Y. P.)
收藏
  |  
浏览/下载:89/9
  |  
提交时间:2010/03/29
AVALANCHE PHOTODIODES
AREA
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection
会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Zhao, YM (Zhao, Y. M.)
;
Ning, J (Ning, J.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Li, JM (Li, J. M.)
收藏
  |  
浏览/下载:103/26
  |  
提交时间:2010/03/29
homoepitaxy
4H-SiC
multi-epilayer
UV detection
p(+)-pi-n(-)
ULTRAVIOLET PHOTODETECTOR
EPITAXIAL-GROWTH
Micro-raman investigation of defects in a 4H-SiC homoepilayer
会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Zhao, YM (Zhao, Y. M.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Zeng, YP (Zeng, Y. P.)
收藏
  |  
浏览/下载:162/28
  |  
提交时间:2010/03/29
micro-raman
4H-SiC
defects
3C-inclusions
triangle-shaped inclusion
EPITAXIAL LAYERS
SILICON-CARBIDE
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:100/29
  |  
提交时间:2010/03/29
homoepitaxial growth
low-pressure hot-wall CVD
structural and optical characteristics
intentional doping
Schottky barrier diodes
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
会议论文
15th international conferene on dynamical processes in excited states of solids, shanghai, peoples r china, aug 01-05, 2005
作者:
Jin P
收藏
  |  
浏览/下载:159/26
  |  
提交时间:2010/03/29
quantum dots
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
作者:
Xu B
收藏
  |  
浏览/下载:134/15
  |  
提交时间:2010/03/29
Monte Carlo simulation
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Sun, GS (Sun, G. S.)
;
Liu, XF (Liu, X. F.)
;
Gong, QC (Gong, Q. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Li, JY (Li, J. Y.)
;
Zeng, YP (Zeng, Y. P.)
;
Li, JM (Li, J. M.)
收藏
  |  
浏览/下载:166/18
  |  
提交时间:2010/03/29
4H-SiC
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