Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots

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	Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
	Jin P
	2006
会议名称	15th international conferene on dynamical processes in excited states of solids
会议日期	aug 01-05, 2005
会议地点	shanghai, peoples r china
关键词	quantum dots
页码	119: 183-187
通讯作者	chen, zh, fudan univ, dept phys, surface phys lab, shanghai 200433, peoples r china. 电子邮箱地址: zhanghai@fudan.edu.cn
中文摘要	we have investigated the evolution of exciton state filling in inas/gaas quantum dot (qd) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. in addition to the emission bands of exciton recombination corresponding to the atom-like s, p and d, etc. shells of qds, it was observed that some extra states v between the s and p shells, and d' between the p and d shells appear in the spectra with increasing number of excitons occupying the qds at a certain temperature. the emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in qds. (c) 2006 elsevier b.v. all rights reserved.
英文摘要	we have investigated the evolution of exciton state filling in inas/gaas quantum dot (qd) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. in addition to the emission bands of exciton recombination corresponding to the atom-like s, p and d, etc. shells of qds, it was observed that some extra states v between the s and p shells, and d' between the p and d shells appear in the spectra with increasing number of excitons occupying the qds at a certain temperature. the emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in qds. (c) 2006 elsevier b.v. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; natl nat sci fdn china.; sci & technol commiss shanghai municipal.; chinese phys soc.; shanhai phys soc.; chinese luminescence soc.; surface phys lab.; fudan univ, phys dept & synchrotron radiat res ctr.; univ sci & technol china, natl synchrotron radiat lab.; natl lab infrared phys, shanghai inst tech phys.; changchun inst opt, key lab. fudan univ; fudan univ, dept phys, surface phys lab, shanghai 200433, peoples r china; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI（ISTP）
会议主办者	natl nat sci fdn china.; sci & technol commiss shanghai municipal.; chinese phys soc.; shanhai phys soc.; chinese luminescence soc.; surface phys lab.; fudan univ, phys dept & synchrotron radiat res ctr.; univ sci & technol china, natl synchrotron radiat lab.; natl lab infrared phys, shanghai inst tech phys.; changchun inst opt, key lab. fudan univ
会议录	journal of luminescence
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0022-2313
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10034]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P. Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots[C]. 见:15th international conferene on dynamical processes in excited states of solids. shanghai, peoples r china. aug 01-05, 2005.