|
已选(0)清除
条数/页： 排序方式：
|
| The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer 期刊论文
CrystEngComm, 2017, 卷号: 19, 页码: 4330–4337
作者: Gaoqiang Deng; Yuantao Zhang; Zhen Huang; Long Yan; Pengchong Li
  收藏 | 浏览/下载：17/0 | 提交时间：2018/11/30 |
| Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes 期刊论文
superlattices and microstructures, 2016, 卷号: 96, 页码: 220-225
Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaoguang He; Xiaojing Li; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du
收藏 | 浏览/下载：29/0 | 提交时间：2017/03/10 |
| XPS study of impurities in Si-doped AlN film 期刊论文
surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏 | 浏览/下载：29/0 | 提交时间：2017/03/10 |
| Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution 期刊论文
applied surface science, 2016, 卷号: 360, 页码: 772-776
Junyan Jiang; Yuantao Zhang; Chen Chi; Fan Yang; Pengchong Li; Degang Zhao; Baolin Zhang; Guotong Du
收藏 | 浏览/下载：12/0 | 提交时间：2017/03/10 |
| The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏 | 浏览/下载：24/0 | 提交时间：2017/03/10 |
| Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
applied physics a, 2016, 卷号: 122, 期号: 9
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏 | 浏览/下载：13/0 | 提交时间：2017/03/10 |
| Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文
superlattices and microstructures, 2016, 卷号: 97, 页码: 186-192
X. Li; D.G. Zhao; J. Yang; D.S. Jiang; Z.S. Liu; P. Chen; J.J. Zhu; W. Liu; X.G. He; X.J. Li; F. Liang; L.Q. Zhang; J.P. Liu; H. Yang; Y.T. Zhang; G.T. Du
收藏 | 浏览/下载：25/0 | 提交时间：2017/03/10 |
| Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 5, 页码: 057703
Feng Liang; Ping Chen; De-Gang Zhao; De-Sheng Jiang; Zhi-Juan Zhao; Zong-Shun Liu; Jian-Jun Zhu; Jing Yang; Wei Liu; Xiao-Guang He; Xiao-Jing Li; Xiang Li; Shuang-Tao Liu; Hui Yang; Li-Qun Zhang; Jian-Ping Liu; Yuan-Tao Zhang; Guo-Tong Du
收藏 | 浏览/下载：30/0 | 提交时间：2017/03/10 |
| Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文
chemical physics letters, 2016, 卷号: 651, 页码: 76-79
F. Liang; P. Chen; D.G. Zhao; D.S. Jiang; Z.S. Liu; J.J. Zhu; J. Yang; W. Liu; X.G. He; X.J. Li; X. Li; S.T. Liu; H. Yang; L.Q. Zhang; J.P. Liu; Y.T. Zhang; G.T. Du
收藏 | 浏览/下载：20/0 | 提交时间：2017/03/10 |
| Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
materials technology, 2016
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. Li; S. T. Liu; H. Yang; L. Q. Zhang; J. P. Liu; Y. T. Zhang; G. T. Du
收藏 | 浏览/下载：22/0 | 提交时间：2017/03/10 |
