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| Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文
journal of alloys and compounds, 2015, 卷号: 625, 页码: 266–270
W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; M. Shi; D.M. Zhao; X. Li; J.P. Liu; S.M. Zhang; H. Wang; H. Yang
  收藏 | 浏览/下载：26/0 | 提交时间：2016/03/23 |
| Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers 期刊论文
journal of alloys and compounds, 2015, 卷号: 635, 期号: 2015, 页码: 82–86
J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; H. Yang; Y.T. Zhang; G.T. Du
收藏 | 浏览/下载：13/0 | 提交时间：2016/03/23 |
| Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
journal of applied physics, 2015, 卷号: 117, 页码: 055709
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du
收藏 | 浏览/下载：15/0 | 提交时间：2016/03/23 |
| Differential resistance of GaN-based laser diodes with and without polarization effect 期刊论文
applied optics, 2015, 卷号: 54, 期号: 29, 页码: 8706-8711
X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; L. C. LE; W. LIU; X. G. HE; X. J. LI; F. LIANG; L. Q. ZHANG; J. Q. LIU; H. YANG
收藏 | 浏览/下载：18/0 | 提交时间：2016/03/23 |
| The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes 期刊论文
physica status solidi a-applications and materials science, 2015, 卷号: 212, 期号: 12, 页码: 2936–2943
P. Chen; D.G. Zhao; D.S. Jiang; J.J. Zhu; Z.S. Liu; L.C. Le; J. Yang; X. Li; L. Q. Zhang; J.P. Liu; S.M. Zhang; H. Yang
收藏 | 浏览/下载：9/0 | 提交时间：2016/03/22 |
| Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文
optics express, 2015, 卷号: 23, 期号: 12, 页码: 15935
W. Liu; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; M. Shi; D. M.Zhao; X. Li; J. P. Liu; S. M. Zhang; H. Wang; H. Yang; Y. T. Zhang; G. T.Du
收藏 | 浏览/下载：20/0 | 提交时间：2016/03/23 |
| A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold 期刊论文
superlattices and microstructures, 2015, 卷号: 80, 期号: 2015, 页码: 111–117
X. Li; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; M. Shi; D.M. Zhao; W. Liu; J.J. Zhu; S.M. Zhang; H. Yang
收藏 | 浏览/下载：23/0 | 提交时间：2016/03/23 |
| The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters 期刊论文
superlattices and microstructures, 2015, 卷号: 88, 页码: 50-55
W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; X. Li; F. Liang; J.P. Liu; S.M. Zhang; H. Yang; Y.T. Zhang; G.T. Du
收藏 | 浏览/下载：20/0 | 提交时间：2016/03/23 |
