Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers

	Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers
	J. Yang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; L.C. Le ; X.G. He ; X.J. Li ; H. Yang ; Y.T. Zhang ; G.T. Du
刊名	journal of alloys and compounds
	2015
卷号	635 期号:2015 页码:82–86
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2016-03-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26760]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	J. Yang,D.G. Zhao,D.S. Jiang,et al. Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers[J]. journal of alloys and compounds,2015,635(2015):82–86.
APA	J. Yang.,D.G. Zhao.,D.S. Jiang.,P. Chen.,J.J. Zhu.,...&G.T. Du.(2015).Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers.journal of alloys and compounds,635(2015),82–86.
MLA	J. Yang,et al."Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers".journal of alloys and compounds 635.2015(2015):82–86.