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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2006    学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 4, 页码: art.no.046101 Li DY (Li D. Y.); Huang YZ (Huang Y. Z.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Ye XJ (Ye X. J.); Chong M (Chong M.); Chen LH (Chen L. H.); Yang H (Yang H.); Liang JW (Liang J. W.) 收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11 LINEWIDTH ENHANCEMENT FACTOR  WAVE-GUIDE LASER  GAN SUBSTRATE  INDEX  TEMPERATURE  GAIN   Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots 期刊论文 applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130 Liang S (Liang S.); Zhu HL (Zhu H. L.); Ye XL (Ye X. L.); Wang W (Wang W.) 收藏  |  浏览/下载：39/0  |  提交时间：2010/04/11 photoluminescence  quantum dots  indium arsenide  1.3 MU-M  CHEMICAL-VAPOR-DEPOSITION  PHASE-EPITAXY  GAAS  LUMINESCENCE  SUBSTRATE  ISLANDS  DENSITY  LASERS  LAYER   Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE 期刊论文 semiconductor science and technology, 2006, 卷号: 21, 期号: 7, 页码: 841-845 Feng W (Feng W.); Pan JQ (Pan J. Q.); Zhou F (Zhou F.); Yang H (Yang H.); Zhao LJ (Zhao L. J.); Zhu HL (Zhu H. L.); Wang W (Wang W.) 收藏  |  浏览/下载：17/0  |  提交时间：2010/04/11 VAPOR-PHASE EPITAXY  BURIED-HETEROSTRUCTURE LASERS  QUANTUM-WELL STRUCTURES  BANDGAP ENERGY CONTROL  LAYERS  INGAASP   Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 10, 页码: art.no.103503 Liang S (Liang S.); Zhu HL (Zhu H. L.); Wang W (Wang W.) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  OPTICAL-PROPERTIES  PHASE-EPITAXY  MU-M  GAAS  SURFACE  GROWTH  MISORIENTATION  FABRICATION  UNIFORMITY   Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE 会议论文 12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006 Feng, W (Feng, W.); Pan, JQ (Pan, J. Q.); Zhou, F (Zhou, F.); Zhao, LJ (Zhao, L. J.); Zhu, HL (Zhu, H. L.); Wang, W (Wang, W.) 收藏  |  浏览/下载：93/15  |  提交时间：2010/03/29 BURIED-HETEROSTRUCTURE LASERS  BANDGAP ENERGY CONTROL  VAPOR-PHASE EPITAXY  PRESSURE MOVPE  CONVERTER   Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 25, 页码: art.no.252101 Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang Hui); Zhu JJ (Zhu J. J.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Liang JW (Liang J. W.); Hao XP (Hao X. P.); Wei L (Wei L.); Li X (Li X.); Li XY (Li X. Y.); Gong HM (Gong H. M.) 收藏  |  浏览/下载：57/0  |  提交时间：2010/04/11 YELLOW LUMINESCENCE  ELECTRON-BEAM  VACANCIES   Unselective regrowth of 1.5-mu m InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers 期刊论文 optical engineering, 2006, 卷号: 45, 期号: 9, 页码: art.no.090501 Feng W (Feng W.); Ding Y (Ding Y.); Pan JQ (Pan J. Q.); Zhao LJ (Zhao L. J.); Zhu HL (Zhu H. L.); Wang W (Wang W.) 收藏  |  浏览/下载：26/0  |  提交时间：2010/04/11 buried heterostructure  regrowth  multiple quantum well  distributed feed back  laser  HIGH-TEMPERATURE  OPERATION  10-GB/S