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Fabrication of diode-shaped zno nanostructures 期刊论文
Optoelectronics and advanced materials-rapid communications, 2011, 卷号: 5, 期号: 12, 页码: 1282-1285
作者:  Xu, Peng;  Zhuang, Hui-Zhao
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 33, 页码: 335102
He JF; Wang HL; Shang XJ; Li MF; Zhu Y; Wang LJ; Yu Y; Ni HQ; Xu YQ; Niu ZC
收藏  |  浏览/下载：24/0  |  提交时间：2012/01/06
A practical route towards fabricating GaN nanowire arrays 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H
收藏  |  浏览/下载：26/0  |  提交时间：2012/02/06
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307
作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ
收藏  |  浏览/下载：107/3  |  提交时间：2010/04/05
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08
The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文
chinese physics b, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Jiang DS (Jiang De-Sheng); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Wang H (Wang Hui); Chen GF (Chen Gui-Feng); Yang H (Yang Hui)
收藏  |  浏览/下载：130/35  |  提交时间：2010/03/08
GaN  
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801
作者:  Yang JK;  Wei TB;  Duan RF
收藏  |  浏览/下载：73/3  |  提交时间：2010/03/08
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901
作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H
收藏  |  浏览/下载：64/1  |  提交时间：2010/03/08
Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111
Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08

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