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Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence 期刊论文
Nanotechnology, 2019, 卷号: 30, 期号: 4, 页码: 045604
作者:  Shaoteng Wu;  Liancheng Wang;  Zhiqiang Liu;  Xiaoyan Yi;  Yunyu Wang;  Cheng Cheng;  Chen Lin;  Tao Feng;  Shuo Zhang;  Tao Li;  Tongbo Wei;  Jianchang Yan;  Guodong Yuan;  Junxi Wang;  Jinmin Li
收藏  |  浏览/下载：51/0  |  提交时间：2019/11/19
Investigation of pattern-orientation on stress in GaN grown on Si (111) substrate in lateral confinement epitaxy 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 122, 页码: 336-342
作者:  Xiaoyu Tan ;   Xiaoli Ji ;   Tongbo Wei ;   Xilin Li ;   Xuecheng Wei ;   Junxi Wang ;   Jinmin Li
收藏  |  浏览/下载：25/0  |  提交时间：2020/07/31
Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy 期刊论文
Nanotechnology, 2017, 卷号: 28, 页码: 135704 (9pp)
作者:  Hyok So;  Dong Pan;  Lixia Li;  Jianhua Zhao
收藏  |  浏览/下载：13/0  |  提交时间：2018/07/02
Enhanced performance of 17.7 GHz SAW devices based on AlN/diamond/Si layered structure with embedded nanotransducer 期刊论文
Appl. Phys. Lett., 2017, 卷号: 111, 页码: 253502
作者:  Enhanced performance of 17.7 GHz SAW devices based on AlN/diamond/Si layered structure with embedded nanotransducer
收藏  |  浏览/下载：49/0  |  提交时间：2018/07/02
Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111) 期刊论文
materials science in semiconductor processing, 2016, 卷号: 52, 页码: 68-74
Lichun Zhang; XuewenGeng; GuoweiZha; JianxingXu; SihangWei; BenMa; Zesheng Chen; XiangjunShang; HaiqiaoNi; ZhichuanNiu
收藏  |  浏览/下载：16/0  |  提交时间：2017/03/10
Si(111)衬底上GaN外延的MOCVD生长及特性研究 学位论文
硕士, 北京: 中国科学院研究生院, 2015
赵丹梅
收藏  |  浏览/下载：28/0  |  提交时间：2015/06/02
GaN  MOCVD  
Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates 期刊论文
applied surface science, 2015, 卷号: 353, 页码: 744-749
Guoguo Yan; Feng Zhang; Yingxi Niu; Fei Yang; Xingfang Liu; Lei Wang; Wanshun Zhao; Guosheng Sun; Yiping Zeng
收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29
Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays 期刊论文
nanotechnology, 2015, 卷号: 26, 期号: 26, 页码: 265302
Tuanwei Shi; Xiaoye Wang; Baojun Wang; Wei Wang; Xiaoguang Yang; Wenyuan Yang; Qing Chen; Hongqi Xu; Shengyong Xu; Tao Yang
收藏  |  浏览/下载：18/0  |  提交时间：2016/03/23
Structure and Magnetic Properties of (In, Mn) As Based Core-Shell Nanowires Grown on Si(111) by Molecular-Beam Epitaxy 期刊论文
chinese physics letters, 2014, 卷号: 31, 期号: 7, 页码: 078103
Pan, D; Wang, SL; Wang, HL; Yu, XZ; Wang, XL; Zhao, JH
收藏  |  浏览/下载：16/0  |  提交时间：2015/03/25
Competitive growth mechanisms of AlN on Si (111) by MOVPE 期刊论文
scientific reports, 2014, 卷号: 4, 页码: 6416
Feng, YX; Wei, HY; Yang, SY; Chen, Z; Wang, LS; Kong, SS; Zhao, GJ; Liu, XL
收藏  |  浏览/下载：22/0  |  提交时间：2015/03/25

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