| Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy | |
| Hyok So; Dong Pan; Lixia Li; Jianhua Zhao | |
| 刊名 | Nanotechnology
 |
| 2017 | |
| 卷号 | 28页码:135704 (9pp) |
| 学科主题 | 半导体物理 |
| 公开日期 | 2018-07-02 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28656]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Hyok So,Dong Pan,Lixia Li,et al. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy[J]. Nanotechnology,2017,28:135704 (9pp). |
| APA | Hyok So,Dong Pan,Lixia Li,&Jianhua Zhao.(2017).Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy.Nanotechnology,28,135704 (9pp). |
| MLA | Hyok So,et al."Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy".Nanotechnology 28(2017):135704 (9pp). |
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