Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence

	Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence
	Shaoteng Wu; Liancheng Wang; Zhiqiang Liu; Xiaoyan Yi; Yunyu Wang; Cheng Cheng; Chen Lin; Tao Feng; Shuo Zhang; Tao Li; Tongbo Wei; Jianchang Yan; Guodong Yuan; Junxi Wang; Jinmin Li
刊名	Nanotechnology
	2019
卷号	30 期号:4 页码:045604
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29372]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Shaoteng Wu;Liancheng Wang;Zhiqiang Liu;Xiaoyan Yi;Yunyu Wang;Cheng Cheng;Chen Lin;Tao Feng;Shuo Zhang;Tao Li;Tongbo Wei;Jianchang Yan;Guodong Yuan;Junxi Wang;Jinmin Li. Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence[J]. Nanotechnology,2019,30(4):045604.
APA	Shaoteng Wu;Liancheng Wang;Zhiqiang Liu;Xiaoyan Yi;Yunyu Wang;Cheng Cheng;Chen Lin;Tao Feng;Shuo Zhang;Tao Li;Tongbo Wei;Jianchang Yan;Guodong Yuan;Junxi Wang;Jinmin Li.(2019).Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence.Nanotechnology,30(4),045604.
MLA	Shaoteng Wu;Liancheng Wang;Zhiqiang Liu;Xiaoyan Yi;Yunyu Wang;Cheng Cheng;Chen Lin;Tao Feng;Shuo Zhang;Tao Li;Tongbo Wei;Jianchang Yan;Guodong Yuan;Junxi Wang;Jinmin Li."Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence".Nanotechnology 30.4(2019):045604.