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Highly Reproducible Nanolithography by Dynamic Plough of an Atomic-Force Microscope Tip and Thermal-Annealing Treatment 期刊论文
ieee transactions on nanotechnology, 2011, 卷号: 10, 期号: 1, 页码: 53-58
Lu XF; Balocco C; Yang FH; Song AM
收藏  |  浏览/下载：71/7  |  提交时间：2011/07/05
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL; Chen YH; Jiang CY; Liu Y; Ma H
收藏  |  浏览/下载：36/4  |  提交时间：2011/07/05
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：54/5  |  提交时间：2011/07/05
Resonant subband Landau level coupling in symmetric quantum well 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083502
Tung LC (Tung L. -C.); Wu XG (Wu X. -G.); Pfeiffer LN (Pfeiffer L. N.); West KW (West K. W.); Wang YJ (Wang Y. -J.)
收藏  |  浏览/下载：30/0  |  提交时间：2010/12/05
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan)
收藏  |  浏览/下载：41/0  |  提交时间：2010/12/28
Tensile and compressive mechanical behavior of twinned silicon carbide nanowires 期刊论文
acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者:  Li JB
收藏  |  浏览/下载：63/1  |  提交时间：2010/04/22
Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902
Chen YH; Li C; Zhou ZW; Lai HK; Chen SY; Ding WC; Cheng BW; Yu YD
收藏  |  浏览/下载：93/14  |  提交时间：2010/03/08
Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107
作者:  Qian X
收藏  |  浏览/下载：82/7  |  提交时间：2010/03/08
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Lin, GQ; Zeng, YP; Wang, XL; Liu, HX
收藏  |  浏览/下载：20/0  |  提交时间：2010/03/08
Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 11, 页码: 4300-4304
作者:  Liang S;  Pan JQ
收藏  |  浏览/下载：57/0  |  提交时间：2010/03/08

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