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CORC

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Improvement of efficiency of gan-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition 期刊论文
Applied physics letters, 2011, 卷号: 98, 期号: 24, 页码: 3
作者:  Zhang, L.;  Wei, X. C.;  Liu, N. X.;  Lu, H. X.;  Zeng, J. P.
收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12
Growth of 2 mu m crack-free gan on si(111) substrates by metal organic chemical vapor deposition 期刊论文
Chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: 4
作者:  Wei Meng;  Wang Xiao-Liang;  Xiao Hong-Ling;  Wang Cui-Mei;  Pan Xu
收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12
Theoretical study of polarization-doped gan-based light-emitting diodes 期刊论文
Applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: 3
作者:  Zhang, L.;  Ding, K.;  Liu, N. X.;  Wei, T. B.;  Ji, X. L.
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05
Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face iii-nitride structure 期刊论文
Applied physics letters, 2010, 卷号: 97, 期号: 6, 页码: 3
作者:  Zhang, L.;  Ding, K.;  Yan, J. C.;  Wang, J. X.;  Zeng, Y. P.
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Strong Spin-Orbit Interactions in an InAlAs/InGaAs/InAlAs Two-Dimensional Electron Gas by Weak Antilocalization Analysis 期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 6, 页码: art. no. 063004
Sun L; Zhou WZ; Yu GL; Shang LY; Gao KH; Zhou YM; Lin T; Cui LJ; Zeng YP; Chu JH
收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08
Growth and characterization of algan/aln/gan hemt structures with a compositionally step-graded algan barrier layer 期刊论文
Chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708
作者:  Ma Zhi-Yong;  Wang Xiao-Liang;  Hu Guo-Xin;  Ran Jun-Xue;  Xiao Hong-Ling
收藏  |  浏览/下载：34/0  |  提交时间：2019/05/12
Structure and device characteristics of AlxGa1-xAs/GaAs solar cells 期刊论文
journal of crystal growth, 1996, 卷号: 162, 期号: 0, 页码: 43-47
Li B; Xiang XB; You ZP; Xu Y; Fei XY
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/17
REGROWTH  LAYERS  SURFACE  GAAS  AL  
OPTICAL GAIN IN GAAS GAALAS GRADED-INDEX SEPARATE-CONFINEMENT SINGLE-QUANTUM-WELL HETEROSTRUCTURES 期刊论文
ieee journal of quantum electronics, 1989, 卷号: 25, 期号: 6, 页码: 1171-1178
ZHU LD; ZHENG BZ; XU ZY; XU JZ; FEAK GAB
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15

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