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CORC

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Defect properties of as-grown and electron-irradiated te-doped gasb studied by positron annihilation 期刊论文
Semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: 6
作者:  Li Hui;  Zhou Kai;  Pang Jingbiao;  Shao Yundong;  Wang Zhu
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：53/10  |  提交时间：2011/07/05
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏  |  浏览/下载：75/2  |  提交时间：2010/05/24
Investigation on the structural origin of n-type conductivity in inn films 期刊论文
Journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: 5
作者:  Wang, H.;  Jiang, D. S.;  Wang, L. L.;  Sun, X.;  Liu, W. B.
收藏  |  浏览/下载：29/0  |  提交时间：2019/05/12
Investigation on the structural origin of n-type conductivity in InN films 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H
收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08
Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1034-1037
Hao, XP; Wang, BY; Yu, RS; Wei, L; Wang, H; Zhao, DG; Hao, WC
收藏  |  浏览/下载：71/2  |  提交时间：2010/03/08
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type gan? 期刊论文
Journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: 6
作者:  Zhao, D. G.;  Jiang, D. S.;  Zhu, J. J.;  Liu, Z. S.;  Zhang, S. M.
收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文
journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521
Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H
收藏  |  浏览/下载：51/5  |  提交时间：2010/03/08
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.241917
作者:  Jiang DS;  Zhu JJ;  Li XY;  Zhang SM;  Zhao DG
收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11
Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 3, 页码: art.no.036110
作者:  Liu J
收藏  |  浏览/下载：549/20  |  提交时间：2010/04/11

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