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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Study on Electrochemical Properties of MnO_2/MoS_2 composites 期刊论文 Acta Geologica Sinica(English Edition), 2017 YANG Yang; CHUAN Xiuyun 收藏  |  浏览/下载：10/0  |  提交时间：2017/12/03 capacitor  electrolyte  capacitance  crystalline  graphite  attributed  voltammetry  charges  attached  symmetrical   Enhanced viscosity of aqueous palygorskite suspensions through physical and chemical processing 期刊论文 advances in materials science and engineering, 2015 Zhou, Feng-Shan; Li, Tian-Qi; Yan, Yun-Hua; Cao, Can; Zhou, Lin; Liu, Yang 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 Beam wander of random electromagnetic Gaussian-shell model vortex beams propagating through a Kolmogorov turbulence 期刊论文 optics communications, 2015 Wu, Guohua; Dai, Wen; Tang, Hua; Guo, Hong 收藏  |  浏览/下载：101/0  |  提交时间：2015/11/11 Beam wander  Atmospheric turbulence  Topological charge  Coherent length  Transverse scale  ORBITAL ANGULAR-MOMENTUM  ATMOSPHERIC-TURBULENCE  OPTICAL COMMUNICATION  SCINTILLATION  REDUCTION  POLARIZATION  PHASE   Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs 期刊论文 semiconductor science and technology, 2014 Tan, Fei; Huang, Ru; An, Xia; Wu, Weikang; Feng, Hui; Huang, Liangxi; Fan, Jiewen; Zhang, Xing; Wang, Yangyuan 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13 quasi-SOI device  single event effect (SEE)  total ionizing dose (TID)  worst case  TECHNOLOGIES  TRANSISTOR  CANDIDATE  MOSFET  UPSET   Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric 期刊论文 SCIENCE CHINA-INFORMATION SCIENCES, 2014 Wei KangLiang; Egley, James; Liu XiaoYan; Du Gang 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 carrier transport  full Coulomb interaction  gate dielectric  high-kappa  Monte Carlo (MC)  FinFET  remote charge scattering (RCS)  FIELD-EFFECT-TRANSISTORS  MONTE-CARLO-SIMULATION  OXIDE-SEMICONDUCTOR TRANSISTORS  ELECTRON-MOBILITY  LIMITED MOBILITY  MOSFETS  DEGRADATION  STACKS   Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories 期刊论文 应用物理学快报, 2008 Xu, Nuo; Liu, Lifeng; Sun, Xiao; Liu, Xiaoyan; Han, Dedong; Wang, Yi; Han, Ruqi; Kang, Jinfeng; Yu, Bin 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 COMPLEX   Parameters for the generalized born model consistent with RESP atomic partial charge assignment protocol 期刊论文 journal of physical chemistry b, 2003 Zhang, W; Hou, TJ; Qiao, XB; Xu, XJ 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/12 ACCESSIBLE SURFACE-AREAS  HYDRATION SHELL-MODEL  MOLECULAR-FORCE FIELD  GENETIC ALGORITHM  FREE-ENERGIES  SOLVATION MODELS  CONFORMATIONAL-ANALYSIS  DIELECTRIC MEDIUM  SOLUTE MOLECULES  WATER